Context: In the semiconductor industry, infrared light can be used to characterize materials such as thin films and periodic trench structures. By measuring the reflectance of light from the surface of a semiconductor wafer, the index of refraction (n) and the extinction Coefficient (k) can be determined via the Forouhi-Bloomer dispersion equations. The reflectance from the infrared light can also be used to determine the critical dimension, depth, and sidewall angle of high aspect ratio trench structures.

Question: What letter represents the index of refraction?
Answer: n

Question: What letter represents the extinction Coefficient?
Answer: k

Question: What equations are used to figure out the index of refraction and extinction Coefficient?
Answer: Forouhi-Bloomer dispersion

Question: Along with critical dimension and depth, what can the infrared light reflectance be used to determine in regard to high aspect ratio trench structures?
Answer: sidewall angle

Question: What reflectance is measured from a semiconductor wafer's surface to determine the index of refraction?
Answer: light

Question: What industry can use infrared light to characterize the extinction Coefficient?
Answer: Unanswerable

Question: What reflectance is measured from the surface of a critical dimension?
Answer: Unanswerable

Question: What letter represents trench structures?
Answer: Unanswerable

Question: Along with critical dimension and depth, what can infrared light reflectance be used to determine in regard to index of refraction?
Answer: Unanswerable