Size-controlled ambipolar graphene nanoribbon transistors by an all-dry mask method
Abstract Conventional graphene nanoribbon (GNR) field-effect transistor (FET) fabrication involved the wet process with the separated nanoribbon formation and device fabrication. Here, we demonstrate one simple and novel non-solution method to integrate the GNR formation and the FET fabrication, where a gold film is used as mask for electrode deposition, following by using a SnO 2 nanoribbon as mask for the formation of GNR. The channel length and width can be controlled by the widths of the gold film and the SnO 2 nanoribbon, respectively. It is found that the GNR with the width up to 330 nm presents the promising ambipolar field-effect properties in air ambient, the hole and electron mobilities are respectively as high as 904 and 703 cm 2  V −1  s −1 , which benefits from the all dry process for both GNR fabrication and device fabrication.