Gallium Oxide Field Effect Transistors — Establishing New Frontiers of Power Switching and Radiation-Hard Electronics
Ga 2 O 3 has gained worldwide interests for next-generation power electronics because its large critical field strength stemming from an ultra-wide bandgap promises miniaturized circuits and systems with high conversion efficiency. Intense pursuit of Ga 2 O 3 power devices stimulated by early demonstrations of high-voltage Ga 2 O 3 field effect transistors (FETs) has brought about tremendous advancements in this new technology, whose strong radiation tolerance and high thermal stability also befit harsh-environment applications. In this paper, we review the various types of depletionand enhancement-mode Ga 2 O 3 FETs — which have predominantly been lateral devices — for power switching and radiation-hard electronics. The development of vertical Ga 2 O 3 transistors based on a low-cost, highly-manufacturable ion implantation doping process will also be discussed.