QUASI-VERTICAL POWER SEMICONDUCTOR DEVICE ON A COMPOSITE SUBSTRATE
The invention relates to a power semiconductor device made of an epitaxied semiconductor material on a stacked structure (10), comprising a semiconductor material layer (13) which is applied to a first surface of a support substrate (11) and is integral with the support substrate (11) by means of an insulating layer (12), said support substrate comprising electric conduction means between the first surface and the second surface, the applied semiconductor material layer (13) acting as an epitaxy support layer for the epitaxied semiconductor material (14, 15).Means for electric connection (16, 17) of said device are provided on the epitaxied semiconductor material and on the second surface of the support substrate, whereby an electric connection via the electrically insulating layer and electric conduction means electrically links the epitaxied semiconductor material (14, 15) to electric connection means (17) provided on the second surface of the support substrate (11).