Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects
An analytical model for surrounding gate metal—oxide—semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poissonand Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.