Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs
In this work we propose a fully experimental method to extract the barrier lowering, at the operative bias point above threshold, in short-channel saturated MOSFETs using the Lundstrom backscattering transport model. At the same time we obtain also an estimate of the backscattering ratio. Respect to previously reported works, our extraction method is fully consistent with the Lundstrom model, whereas other methods make a number of approximations in the calculation of the saturation inversion charge which are inconsistent with the model. The proposed experimental extraction method has been validated and applied to results from 2D quantum corrected device simulation and to measurements on short-channel poly-Si/SiON gate nMOSFETs with gate length down to 70 nm.