A METHOD AND A DEVICE FOR EPITAXIAL GROWTH OF OBJECTS BY CHEMICAL VAPOUR DEPOSITION
A device for epitaxial growth of objects by Chemical Vapour Deposition on a substrate (3) comprises a susceptor (5) adapted to receive said substrate and means for heating walls of the susceptor surrounding the substrate and by that the substrate and a gas mixture fed to the substrate for the growth. The device comprises also means (7, 10) for holding the substrate in the path (8) of said gas mixture through the susceptor at a distance (a) from internal walls thereof.