Synthesis, thermal decomposition and dielectric behavior of bis(thiourea)silver(I)nitrate
New semi-organic bis(thiourea)silver(I)nitrate (TuAgN) single crystals have been grown from slow evaporation solution growth technique. Single crystal X-ray diffraction study reveals that the crystal belongs to orthorhombic system with the non-centrosymmetric space group C2221 and the calculated cell parameters are a = 33.3455 (6) A, b = 45.2957 (7) A, c = 20.3209 (5) A, α = β = γ = 90°, and V = 30692.8 (10) A3. The thermal stability and decomposition behavior of TuAgN compound have been studied by thermogravimetric analysis at three different heating rates 5, 10, and 15 °C min−1. The effective activation energy (Ea) and pre-exponential factor (ln A) of thermal decomposition of thiourea from TuAgN compound at three different heating rates are estimated by model free methods: Arrhenius, Flynn–Wall, Kissinger, and Kim–Park. The calculated effective activation energies were found to vary with the fraction (α) reacted. The compensation effect between the (ln A) and (Ea) has also been studied. Dielectric properties of TuAgN crystal have been studied in a wide range of frequencies and temperatures. AC conductivity has also been carried out.