Composition for forming a silicon-containing resist underlayer film and patterning process using the same
The present invention provides a composition for forming a silicon-containing resist underlayer film, wherein the composition contains: a component (A) comprising at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition.  R 11 m11 R 12 m12 R 13 m13 Si(OR 14 ) (4-m11-m12-m13) (2)  Si(OR 15 ) 4 (3)