Design and construction of a research atomic layer deposition system for in situ infrared and electron spectroscopies
A description is given of an ultra-high vacuum surface-analysis chamber that incorporates an internal cell for performing atomic layer deposition at a pressure of up to ∼1 Torr. The apparatus permits the growth process to be interrupted in stages during which data can be obtained using infrared and x-ray photoemission spectroscopies together with other electron-based techniques. Demonstration results are given for the adsorption of H2O on Si (100) at a pressure of ∼0.3 Torr. The system described is generally applicable in the study of any surface reaction under non-high-vacuum conditions in which there is a need for both infrared and electron spectroscopies.