Dislocation energy per unit length for SnO2Ag/glass thin films
In recent years the structures of thin layers have been widely studied, because of their properties that are unattainable in bulk materials. The aim of this paper is to present the dislocation energy per unit length of the SnO2Ag thin films deposited on Glass. Dislocation energy per unit length of a 20 nanometer SnAg thin films with 10 and 90 percents of Ag and Sn, respectively, have been calculated using low angle incident x-ray scattering. Results obtained by the proposed experimental test, is then compared with the theoretical analysis data. The dislocation energy's per unit length of the SnO2Ag thin films at temperatures of 25, 325, 525 and 625°C, has been theoretically obtained equals to 1.3679 (nm)2Gpa, 2.138(nm)2Gpa, 1.7551(nm)2Gpa and 1.8959(nm)2Gpa, respectively.