Compact modeling of silicon nanowire MOSFET for radio frequency applications
This article presents the radio frequency small-signal modeling of silicon nanowire (SNW) MOSFET with 30 nm channel length and 5 nm channel radius. Analytical parameter extraction methods are developed by Y-parameter analysis for the proposed equivalent circuit. Y-parameters of SNW MOSFET are obtained by three-dimensional (3D) device simulator. Accuracies of the new model and extracted parameters have been verified by the 3D device simulation data up to 200 GHz. The RMS modeling error of Y-parameter was calculated to be only 1.4%. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:471–473, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25686