Process for adjusting exposure masks relative to a substrate wafer
An improved process for adjusting different exposure masks consecutively relative to a substrate wafer by providing individual pairs of adjustment marks on the substrate with each pair being associated with a selected exposure mask and the number of pairs on the substrate being equal to the number of exposure masks minus one, to be utilized. Preferably, the marks of the pairs are aligned in rows with the first mark of each pair being in the first row and the second mark of each pair being in the second row.