Light emitting semiconductor component i.e. LED, has semiconductor light emission structure formed on one of surfaces of removal structure, carrier arranged on other surface of removal structure, and channel formed in removal structure
The component has a removal structure provided with two surfaces, and a semiconductor light emission structure (12) formed on one of the surfaces. A carrier (13) is arranged on the other surface. A channel is formed in the removal structure. The semiconductor light emission structure exhibits a semiconductor layer (121) of a power type, an active layer (122) and a semiconductor layer (123) of another power type. The removal structure is a raising substrate, where a material is removed by the raising substrate. The removal structure exhibits a semiconductor buffer layer (112). An independent claim is also included for a method for manufacturing a light emitting component. The removal structure consists of Gallium arsenide (GaAs), sapphire, silicon carbide (SiC), Gallium nitride (GaN) and Aluminum nitride (AlN). The channel consists of a Silicon dioxide, a nitride oxide, an organic polymer, gallium nitride, aluminum nitride, silicon carbide and zinc oxide. The semiconductor light emission structure exhibits a material on basis of Aluminum gallium indium phosphide (AlGaInP) or Aluminum indium gallium nitride (AlInGaN).