γ-Phase stabilized Bi4BaxV2−xO11−δ (0.0 ≤ x ≤ 0.20): Structural, thermal and conducting properties
Abstract In the present study, the effect of processing conditions (melt quench followed by sintering) on the structure, thermal and conducting properties is investigated of undoped and doped Bi 4 V 2 O 11 − δ . Both quenched and sintered samples were characterized by various techniques. High conducting disordered γ-phase is stabilized at lower dopant concentration than earlier reported values. The thermal stability of the samples increases with increase in dopant concentration. Activation energies are found in the range 0.70–1.15 eV. The conductivity increases up to x = 0.05 dopant concentration. After that, as dopant concentration increases, the conductivity decreases. A maximum value of conductivity ~ 4.07 × 10 − 3  S/cm at 600 °C is observed for the x = 0.05 sintered sample.