Micro-scale nuclear magnetic resonance on III-V semiconductors and the advance of mechanically detected NMR
To understand the properties of III/V semiconductors, knowledge about the ordering and the atom structure are of crucial importance. Nuclear magnetic resonance (NMR) is a versatile tool that can be used to perform such an investigation. In the research of this doctoral thesis two thin film III/V semiconductors AlGaAs en InGaP are investigated with NMR. In both samples the obtained spectra did not indicate long range cation ordering. A big difference between the two semiconductors is the high stress in the InGaP lattice relative to the AlGaAs lattice because of the difference in lattice constants.In both semiconductors the quadrupolar (spin>½) distributions are measured and modelled.. The second part entails magnetic resonance force microscopy (MRFM). The MRFM design choices of a new probe and the results are presented. MRFM allows the measurement of all spin nuclei of the thin film AlGaAs with an extremely small volume. Furthermore, the polarization transfer of Phosphor to Fluor in KPF6 was studied and the influence of nuclear spin diffusion on the magnetization of Fluor in KPF6