RESISTIVE MEMORY FOR LOW VOLTAGE APPLICATIONS
The invention relates to novel memory cells comprising two electrodes and a layer composed of an active material that is located between said electrodes. The active material contains (a) [1,2]dithiolo-[4,3-c]-1,2-dithiol-3,6-dithione, (b) (2,4,7-trinitro-9-fluoronylidene) malonitrile and optionally (c) a polymer. The invention also relates to a method for producing the inventive cells and to the novel use of a composition that can be used as the active material for the memory cells.