MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
A memory structure including a magnetic tunnel junction (MTJ) structure and a top electrode that are both formed without utilizing ion beam etching is provided. The MTJ structure, which includes a lower magnetic stack, a tunnel barrier layer and an upper magnetic stack, is pyramidal shaped, and end portions of the lower magnetic stack of the MTJ structure are devoid of the tunnel barrier layer and the upper magnetic stack.