Semiconductor storage device performing self-refresh operation in an optimal cycle
A semiconductor storage device has a leak-monitoring capacitor connected to a bit line pre-charge potential generator, and a pre-charging transistor for charging one end of the leak-monitoring capacitor with a first potential (Vcc). The bit line pre-charge potential generator discharges from the leak-monitoring capacitor an amount of electric charges corresponding to a leak generated at a bit line pre-charge potential line which is connected with bit lines. A refresh timer circuit generates a clock signal in a cycle corresponding to a time in which the potential of the one end of the leak-monitoring capacitor decreases from the first potential (Vcc) to a second potential.