Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications
Abstract In this work, we report a gradual bipolar resistive switching memory device using Ni/Si 3 N 4 / n + -Si structure. Different reset transitions are observed depending on compliance current ( I COMP ). The reset switching becomes abrupt around I COMP  = 10 mA, while gradual reset switching with fine controllability is preserved for the devices with I COMP I COMP and reset stop voltage ( V STOP ) for I COMP I COMP  = 10 mA, low resistance state (LRS) shows Ohmic behavior with metallic conducting paths, while high resistance state (HRS) shows non-Ohmic behavior. Also, it is revealed that LRS and HRS conductions follow space-charge-limited current (SCLC) mechanism in low I COMP regime ( I COMP