Evaluation of the performances of a novel Punch Through Trench IGBT using a Si<inf>(1-x)</inf>Ge<inf>(x)</inf> N<sup>&#x002B;</sup> buffer layer by using finite elements simulations
In this paper, a new Punch Through Trench IGBT using a Si (1-x) Ge x N+ buffer layer is investigated by using two dimensional finite elements numerical simulations. The performances of this device are mainly obtained from the reduction of the turn-off switching time for a slight elevation of the on-state voltage. A study of the main static characteristics has been performed, particularly the relevance of the trade-off between the turn-off time and the on-state voltage, and its temperature dependency. At least, a comparison with a Carrier Storage Trench-gate Bipolar Transistor and a Trench Field Stop IGBT also including a Si (1-x) Ge (x) N+ buffer layer is done by the mean of trade off curves.