FinFET Design Considerations Based on Schmitt Trigger with Slew Rate and Gain–Bandwidth Product Analysis
The FinFET device technology has become a strong adjunct to Schmitt trigger (ST). ST response to a sluggish input signal with a quick transition time at the output. This paper presents a systematic design of Schmitt trigger using 45 nm FinFET for low power supply application. The FinFET based Schmitt trigger optimizes propagation delay and leakage power while sustaining good noise response, gain---bandwidth product and slew rate. Our design has achieves delay up to 264 ps with a little leakage power of 1.9131 pW for a sine wave having frequency 1 GHz thus a result of implementing Schmitt trigger with FinFET technology we obtain power dissipation of 1.636 mW with 0.7 V supply. The performance parameters such as slew rate, output noise voltage, gain---bandwidth product, leakage power, power dissipation etc. have been carried out by using cadence virtuoso design tool at 45 nm FinFET implemented in independent gate mode. After simulation all these parameters has been compared with previous published 4T Schmitt trigger at 45 nm with this design and found that they are in close vicinity. Our design reduces delay, leakage power and dynamic power. FinFET based Schmitt trigger offers delay and leakage power reduction ?37.38 and ?75.15 % respectively at 0.7 V power supply.