Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions
Boyuan Chi Leina Jiang Yu Zhu Guoqiang Yu Caihua Wan Xiufeng Han


APS/123-QED




Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China


Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China


Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China


Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China


Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China


xfhan@iphy.ac.cn
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

§ ABSTRACT 
  The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF_2 and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF_2, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF_2, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO_2(001)/FeF_2/IrO_2 and CrO_2(110)/FeF_2/IrO_2 as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216% and 3956%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM  insulators and semiconductors, and broadens applications of the AFM spintronics.


Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions
    Xiufeng Han
    September 9, 2024
===================================================================================



  The magnetic tunnel junction (MTJ), composed of two ferromagnetic (FM) electrodes and a sandwiched insulating barrier, is elementary for spintronic devices <cit.>. The tunneling magnetoresistance (TMR) effect is the core of MTJ, making it suitable for magnetic random-access memories (MRAMs), magnetic sensors, and others spintronic devices <cit.>. To achieve reliable reading and writing, a higher TMR ratio is imperative. Initially, TMR was regarded dominantly determined by the spin polarization of FM electrodes. Therefore, various FM metals with high spin polarizations such as Heusler alloys have been paid plenty of attentions. Thereafter, the importance of symmetry filtering of crystallized barriers for tunneling was gradually realized <cit.>. By analyzing the evanescent states, MgO was predicted to exhibit weak attenuation effect for electrons with the Δ_1 symmetry <cit.>. Consequently, by combining Fe electrode with MgO, one successfully developed MTJs with large TMR ratios <cit.>, manifesting the powerfulness of the barrier engineering for MTJs.

  Recently, the discovery of the antiferromagnetic (AFM) materials with spin splitting band structures, i.e., altermagnetic (ALM) materials <cit.>, has attracted researchers to explore their applications in magnetic devices, two-dimensional materials, superconductivity, etc. <cit.>. Focusing on the local spin polarization in momentum space, researchers have designed a novel all-antiferromagnetic tunnel junctions (AFMTJs) utilizing two ALM (or spin splitting AFM) electrodes instead of FM electrodes <cit.>. Moreover, the TMR ratio can be further enhanced by matching the distribution of the lowest decay rates of the barrier with that of the conduction channels of the AFM electrodes in the reciprocal space <cit.>.

  In fact, the momentum-dependent spin splitting of ALM materials is not only in the real part as reported in <cit.> but also in the imaginary part of their band structures as shown below. Here, by analyzing the complex band structure of the ALM insulator FeF_2, we found a noticeable splitting in the decay rate κ of the evanescent states for the two spin-channels. This feature is distinguished from that observed in conventional non-magnetic (NM) or trivial AFM insulators with the same decay rate for opposite spins. The splitting decay rates of evanescent states thereby result in the spin-resolved effective barrier for tunneling electrons with opposite spins, thus allowing ALM insulators to act as a spin filter with zero stray field. The generation of spin filtering effect without producing stray fields is a distinctive property of ALM materials, which makes them applicable in spin- and angle-resolved photoemission spectroscopy (SARPES) and enhancing the TMR effect, etc.
  
  Utilizing the spin filtering effect of ALM insulators, it is viable to design non-volatile MTJs with a magnetic compensated barrier. In this study, through first-principles calculations, we demonstrated the anisotropic spin filtering effect of ALM material FeF_2. Based on this effect, we designed two kinds of MTJ: ALM/ALM insulator barrier/NM and FM/ALM insulator barrier/NM MTJs. Specifically, we used RuO_2(001)/FeF_2/IrO_2 and CrO_2(110)/FeF_2/IrO_2 as the corresponding prototypes to study these two kinds of MTJs. The quantum transport calculations revealed that the two MTJs exhibit the TMR ratios of 216% and 3956%, respectively. The TMR effect in both arises from the concerted play of the spin filtering effect of FeF_2 and the spin-polarization of the FM and ALM electrodes, CrO_2 and RuO_2. The computational details are presented in the Supplementary Materials <cit.>. Due to the usage of NM electrode and ALM barrier with compensated magnetization, both MTJs do not require additional pinning structures, simplifying the device structures. Furthermore, the former MTJ benefits from zero stray field; the latter can be applied in magnetic sensor applications.

  In general, the transmission coefficient T_σ(k_∥) is usually factorized as <cit.>:
  
    T_σ(k_∥)=t_L^σ(k_∥)exp[-2κ(k_∥)d]t_R^σ(k_∥)

  where t_L^σ(k_∥) and t_R^σ(k_∥) are the probabilities for an electron with spin σ to transmit through the left and right electrode/barrier interfaces, respectively. κ(k_∥) is the lowest decay rate in the barrier and d is the barrier width. 

  This equation applies to NM or trivial AFM barriers with spin degeneracy, such as MgO, NiO, and CoO, etc. However, for FM insulators, the lowest decay rate κ is dependent on spin. Thus, Eq.(2) should be rewritten as:
  
    T_σ(k_∥)=t_L^σ(k_∥)exp[-2κ_σ(k_∥)d]t_R^σ(k_∥)

  The spin-dependent κ_σ(k_∥) indicates that electrons with opposite spins experience different effective barrier heights during tunneling, and the barrier acts as a spin filter.

  An ALM material is a nontrivial AFM material that exhibits spin splitting in the absence of spin-orbit coupling. Therefore, for ALM insulators, like FeF_2, LaMnO_3, MnTe, et al., spin splitting occurs along certain high-symmetry directions. This indicates that the spin splitting can also manifest itself in the complex band along these directions as shown below, resulting in a spin-dependent κ_σ(k_∥), analogous to the case of FM insulators, as described by Eq. [eq.2](2). As a result, when electrons tunnel along these spin-split directions of the ALM insulators, the current will be spin-polarized, and the ALM insulators can thus exhibit the spin filtering effect.

  

  The properties of ALM materials are closely related to its crystalline orientation <cit.>. Electrons undergo different spin filtering effect when tunneling along different crystalline orientations of ALM insulators. Figs. [fig1]1(a) and [fig1]1(b) show the crystal-orientation-dependent spin filtering effect when electrons tunnel through the ALM FeF_2. Dashed circles denote areas with small decay rates. As shown in Fig. [fig1]1(a), when a current flows along the [001] direction of FeF_2, due to the same shape of decay rates for the two spin channels, the total spin polarization remains zero, though the current is locally polarized in the momentum space. When a current flows along the [110] direction of FeF_2, the current is then globally spin-polarized [Fig. [fig1]1(b)]. Therefore, the ALM insulators can polarize currents as FM materials, while still retaining advantages of zero stray field and robustness against external magnetic fields.

  To provide a clearer explanation on the spin filtering effect of ALM insulators, we chose FeF_2 as an example. FeF_2 is an ALM insulator with collinear AFM magnetic configuration and a rutile structure as plotted in Fig. [fig2]2(a). Thanks to its magnetic space group P4_2'/mnm’, FeF_2 exhibits a momentum-dependent spin splitting band structure. From the density of states (DOS) of FeF_2(001) depicted in Fig. [fig2]2(c), FeF_2 has zero net magnetization and a 3.5 eV band gap, which is consistent with the experimental study <cit.>. The spin-up and spin-down bands of FeF_2(001) in Fig. [fig2]2(d) degenerate on most high-symmetry lines, but they split along the Γ-M and Z-A directions, reflecting the altermagnetism. Therefore, when electrons tunnel along the Γ-M (Z-A) direction, i.e. the [110] direction of FeF_2, the band gap of the spin-up and spin-down electrons at this high-symmetry line is diverse [see Supplementary Materials <cit.> Fig. S1], which leads to a different barrier height felt by oppositely polarized electrons and thus results in the spin filtering effect.

  The complex band structure can more accurately illustrate the decay of tunneling electrons inside barrier. In the elastic scattering, the transverse wave vector is conserved, and the longitudinal wave vector k_z can be expressed as k_z=q+iκ, where the real part q corresponds to the real band, and the imaginary part κ corresponds to the wave functions that decay into the bulk <cit.>. As a result, tunneling electrons exhibits exponential decay [exp(-2κ d)] in the barrier. Figs. [fig3]3(a) and [fig3]3(b) show the case of tunneling along the [001] direction of FeF_2. The three complex bands in Fig. [fig3]3(b) correspond to the Γ(0, 0), C(0.15, 0.15) and C'(0.15, -0.15) point. On one hand, for the spin degeneracy at the Γ point, the spin-up and spin-down electrons share a similar complex band, thus they have the same lowest decay rate κ at the Fermi energy. On the other hand, the spin splitting along Γ-M leads to a different lowest decay rates for both spins in the complex band structure. However, for FeF_2 with altermagnetism, the spin of the Γ-M' band is opposite to that of the Γ-M band, resulting in κ_σ(Γ-M)=κ_-σ(Γ-M'). Eventually, the two spins share the same shape of k_∥-resolved lowest decay rates, producing a spin-neutral current, but with nonzero local spin polarization in the momentum space.

  Based on this local spin filtering effect in the momentum space, we proposed an MTJ with an ALM metal and an NM metal as electrodes, i.e., ALM/ALM insulator barrier/NM MTJ. As shown in Fig. [fig1]1(c), for each spin channel (blue and red), its conductance is proportional to the overlapping between the distribution of the conduction channels in the ALM electrode and the distribution of the lowest decay rates in the barrier. Switching the Néel vector of the ALM electrode, the spin polarization at each k_∥ point in the momentum space will be reversed, and the overlapping area between the conduction channels and the lowest decay rates is also changed, resulting in a magnetoresistance between the parallel (P) and antiparallel (AP) states.

  We calculated RuO_2(001)/FeF_2/IrO_2 MTJ as a prototype to verify our design. RuO_2 is an ALM metal, and IrO_2 is an NM metal, whose conduction channels are shown in Fig. S2. Fig. S3 shows the atomic structure and the transmission coefficient distributions for the P and AP states of this MTJ, it can be seen that the barrier suppresses the transmission coefficients outside the Γ point in the AP state, which leads to a TMR ratio of 216%. This ALM/ALM insulator barrier/NM MTJ can produce the TMR effect with a spin-neutral current and benefit from zero stray field and fast spin dynamics, similar to the AFMTJs <cit.>. This [001] transporting MTJ also has the same disadvantages as AFMTJs, which have high demand for single crystals and are hard to be switched by a magnetic field. To overcome these drawbacks, we shift our focus on the transport configuration along the [110] direction.

  

  Fig. [fig2]2(b) is the atomic and magnetic structures of FeF_2 cleaved from the (110) crystal face. When electrons tunnel along the [110] direction of FeF_2, the distribution of the lowest decay rates satisfies Fig. [fig3]3(c). Since the band splits along the Γ-M direction, the two spins have completely different complex band structures at the Γ̅ point, as shown in Fig. [fig3]3(d), and this is also true at other k_∥ points, resulting in entirely diverse spin-resolved distribution of the lowest decay rates. Consequently, as long as the current flows along the [110] direction, it will be globally polarized, and the spin polarization will rapidly increase with the thickness of FeF_2. As a result, the ALM insulator FeF_2(110) has the spin filtering effect just like FM insulators.

  

  Since the spin filtering effect of the FeF_2(110) can polarize current globally, the FM electrode is a matched choice of detecting the spin polarization of the current flowing through FeF_2(110) by the TMR effect. As depicted in Fig. [fig1]1(d), we designed a kind of MTJ composed of FM and NM electrodes, i.e., FM/ALM insulator barrier/NM MTJ. The TMR effect can be generated by switching the magnetization of FM electrode. In this MTJ, only the ALM barrier needs to be single-crystallized for the spin filtering effect. Thus, it is probably easier for experimentalists to grow than the MTJ with both ALM electrode and barrier as discussed before. Furthermore, this MTJ is free from the additional complex pinning structures thanks to the robustness of the ALM reference layer against external fields, and is easily switched by both electrical and magnetic methods, etc.

  

  Hence, we constructed CrO_2(110)/FeF_2/IrO_2 MTJ as an example to exhibit the transport properties of the FM/ALM insulator barrier/NM MTJ. CrO_2 is a half-metallic material with 100% spin polarization, whose conduction channel is shown in Fig. S2(c) of the Supplementary Material <cit.>. In fact, CrO_2 and IrO_2 are only chosen for their same atomic structure with FeF_2. We recommend replacing CrO_2 and IrO_2 with CoFe (or CoFeB etc.) and Pt (or Cu etc.) in experiments, respectively. As shown in Fig. [fig4]4(a), the P and AP states are defined as the relative arrangement between the magnetization of CrO_2 and the Néel vector of FeF_2. Because CrO_2 is a half-metal, there is only spin-up channel in the P state. Switching the magnetization of CrO_2, the MTJ becomes the AP state, where only spin-down channel contributes to conductance. For the P state, the higher transmission coefficients appear at the area where the big conduction channels of electrodes match with the smaller κ_↑(k_∥) of FeF_2(110). By comparison, for the AP state, due to the generally larger κ_↓(k_∥) of FeF_2(110), the transmission coefficients are significantly suppressed. Thus, thanks to the large difference of the lowest decay rates of the barrier between the spin-up and spin-down channels, the transmission coefficient of the P state is one order of magnitude larger than that of the AP state, resulting in a huge TMR ratio of 3956%, which nicely meets the needs for the MRAM and sensor applications.

  Fig. [fig4]4(c) displays the dependence of total transmissions on energy for the P state (T_P) and AP state (T_AP). It is found that T_P is always greater than T_AP around the E_F, resulting in a positive TMR effect. Specifically, the TMR at the Fermi energy (E_F) reaches as high as 3956%. In addition, the TMR ratio remains around 3000% within the range of E_F ± 0.3 eV, indicating that the influence of factors such as doping on the shift of the E_F has a small impact on this TMR ratio.

  The spin filtering effect is sensitive to the barrier thickness, as shown in Fig. [fig4]4(d), we calculated the total transmissions and TMR ratios as a function of the number of FeF_2(110) monolayers. Both T_P and T_AP decrease exponentially with increasing barrier layers, while thanks to the spin filtering effect, the TMR ratio increases exponentially, consistent with the simple model in the Supplementary Materials <cit.>. As a result, the CrO_2(110)/FeF_2/IrO_2 MTJ can further increase the TMR effect by increasing the barrier thickness, potentially achieving a TMR value significantly greater than 3956%. Note that this rapid increase in the TMR ratio with barrier thickness does not depend on the selection of FM electrode. Therefore, other FM electrodes, such as CoFeB, Fe, etc., can also be used to replace CrO_2 and obtain a large TMR ratio once an appropriate barrier thickness is used. Additionally, since FeF_2(110) has the lowest decay rate for electrons with Σ_1 symmetry, selecting an FM electrode where Σ_1 symmetry electrons appear only in the majority state can further enhance the TMR effect by the symmetry filtering effect.
  
  Both proposed ALM barrier-based MTJs have experimental feasibility. To generate the TMR effect, only the ALM layer needs to have good single-crystal properties, while the FM and NM layers are not subject to any restrictions. This makes the FM/ALM barrier/NM MTJ, with only one ALM layer, easier to fabricate. Additionally, since the barrier has AFM configuration, it can serve as the reference layer without additional pinning structures, significantly reducing the complexity of MTJ device fabrication and optimization. Furthermore, the choice of barrier materials for the proposed MTJs is also abundant. The spin filtering effect with AFM configuration is not unique to FeF_2, but is an intrinsic property widely shared by ALM insulators, like MnF_2 [shown in Supplementary Materials <cit.> Fig. S4], MnTe <cit.>, LaMnO_3, etc. <cit.>. The MTJ with an ALM barrier constructed based on this effect has a very wide range of candidacy in materials. In our opinion, selecting MnTe with appropriate crystal orientation as the ALM barrier, combined with suitable electrodes, is another good choice for constructing the MTJs proposed in this work, especially considering that the Néel temperature of MnTe is above the room temperature. Furthermore, if the NM electrode of the FM/ALM insulator barrier/NM MTJ is replaced with an FM electrode, then by changing the magnetization directions of both electrodes and the Néel vector of the barrier, four different resistance states can be generated, enabling multi-state storage.

  In conclusion, based on the first-principles calculations, we investigated the tunneling process through the ALM insulators. Owing to the spin-momentum locking band structures, the ALM insulators possess spin-resolved lowest decay rates, resulting in an anisotropic spin filtering effect, which has broad application prospects. We demonstrated the crystal-orientation-dependent spin filtering effect in ALM FeF_2, and by using RuO_2(001)/FeF_2/IrO_2 and CrO_2(110)/FeF_2/IrO_2 as two prototypes, we proposed two kinds of MTJs, i.e., ALM/ALM insulator barrier/NM and FM/ALM insulator barrier/NM MTJs, and reached 216% and 3956% TMR ratios, respectively. The former MTJ benefits from zero stray field, and the latter MTJ has numerous advantages, such as free from an additional complex pinning structure, switchable by both electric methods and magnetic fields, and the only necessity for the single-crystalline structure is the ALM barrier. Thus, these MTJs with an ALM barrier have great potential for applications in the fields of MRAM and magnetic sensors. Our work also provides a promising way to explore the electrical and transport properties of ALM and AFM insulators and promotes the development and application of AFM spintronics.


This work was financially supported by the National Key Research and Development Program of China [MOST Grant No. 2022YFA1402800], the National Natural Science Foundation of China [NSFC, Grant No. 12134017, 12204517, and 12374131], and partially supported by the Strategic Priority Research Program (B) of Chinese Academy of Sciences [CAS Grant No. XDB33000000, Youth Innovation Promotion Association of CAS (2020008)]. The atomic structures were produced using VESTA software <cit.>. High-performance computing resources for contributing to the research results were provided by Beijing PARATERA Technology Co., LTD.











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	[Julliere(1975)]PLA-1975
	author author M. Julliere, title title Tunneling between
			ferromagnetic films, https://doi.org/https://doi.org/10.1016/0375-9601(75)90174-7 journal journal Phys. Lett. A volume
			54, pages 225 (year 1975)NoStop
	[Moodera et al.(1995)Moodera, Kinder, Wong, and Meservey]PRL-74-1995
	author author J. S. Moodera, author L. R. Kinder,
		author T. M. Wong, and		author R. Meservey, title title Large magnetoresistance at room temperature in
			ferromagnetic thin film tunnel junctions, https://doi.org/10.1103/PhysRevLett.74.3273 journal journal Phys. Rev. Lett. volume 74, pages 3273 (year 1995)NoStop
	[Miyazaki and Tezuka(1995)]JMMM-1995
	author author T. Miyazaki and author N. Tezuka, title title Giant magnetic tunneling
			effect in Fe/Al_2O_3/Fe junction, https://doi.org/https://doi.org/10.1016/0304-8853(95)90001-2 journal journal J. Magn. Magn. Mater. volume 139, pages L231 (year
		1995)NoStop
	[Wolf et al.(2001)Wolf,
		Awschalom, Buhrman, Daughton,
		von Molnár, Roukes, Chtchelkanova, and Treger]S-2001
	author author S. A. Wolf, author D. D. Awschalom,
		author R. A. Buhrman, author J. M. Daughton, author
		S. von Molnár, author
		M. L. Roukes, author
		A. Y. Chtchelkanova, and author D. M. Treger, title
	title Spintronics: A spin-based electronics vision for the
			future, https://doi.org/10.1126/science.1065389 journal journal Science volume
			294, pages 1488 (year 2001)NoStop
	[ŽŽuti ćć et al.(2004)ŽŽuti ćć, Fabian,		and Das Sarma]RMP-2004
	author author I. ŽŽuti ćć,
		author J. Fabian, and author S. Das Sarma, title
	title Spintronics: Fundamentals and applications, https://doi.org/10.1103/RevModPhys.76.323 journal journal Rev. Mod. Phys. volume 76, pages 323 (year 2004)NoStop
	[Lenz and Edelstein(2006)]IEEE-2006
	author author J. Lenz and author S. Edelstein, title title Magnetic sensors and
			their applications, https://doi.org/10.1109/JSEN.2006.874493
	journal journal IEEE Sens. J. volume 6, pages 631 (year
		2006)NoStop
	[Zhang and Butler(2003)]JPCM-15-R1603-2003
	author author X.-G. Zhang and author W. H. Butler, title title Band structure, evanescent
			states, and transport in spin tunnel junctions, https://doi.org/10.1088/0953-8984/15/41/R01 journal journal J. Phys.: Condens. Matter volume 15,		pages R1603 (year 2003)NoStop
	[Tsymbal et al.(2003)Tsymbal, Mryasov, and LeClair]JPCM-15-R109-2003
	author author E. Y. Tsymbal, author O. N. Mryasov, and author P. R. LeClair, title title Spin-dependent tunnelling
			in magnetic tunnel junctions, https://doi.org/10.1088/0953-8984/15/4/201 journal journal J. Phys.: Condens. Matter volume 15,		pages R109 (year 2003)NoStop
	[Mavropoulos et al.(2000)Mavropoulos, Papanikolaou, and Dederichs]PRL-85-2000
	author author P. Mavropoulos, author N. Papanikolaou, and author P. H. Dederichs, title title Complex band structure
			and tunneling through Ferromagnet/Insulator/Ferromagnet junctions,	https://doi.org/10.1103/PhysRevLett.85.1088 journal
		journal Phys. Rev. Lett. volume 85,		pages 1088 (year 2000)NoStop
	[Mathon and Umerski(2001)]PRB-63-2001-1
	author author J. Mathon and author A. Umerski, title title Theory of tunneling
			magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction, https://doi.org/10.1103/PhysRevB.63.220403 journal journal Phys. Rev. B volume 63, pages 220403 (year 2001)NoStop
	[Butler et al.(2001)Butler,
		Zhang, Schulthess, and MacLaren]PRB-63-2001-2
	author author W. H. Butler, author X.-G. Zhang,
		author T. C. Schulthess, and		author J. M. MacLaren,	title title Spin-dependent tunneling conductance
			of Fe/MgO/Fe sandwiches, https://doi.org/10.1103/PhysRevB.63.054416 journal journal Phys. Rev. B volume 63, pages 054416 (year 2001)NoStop
	[Yuasa et al.(2004)Yuasa,
		Nagahama, Fukushima, Suzuki,		and Ando]NM-3-2004-1
	author author S. Yuasa, author T. Nagahama,
		author A. Fukushima, author Y. Suzuki, and author
		K. Ando, title title Giant room-temperature magnetoresistance in single-crystal
			Fe/MgO/Fe magnetic tunnel junctions, https://doi.org/10.1038/nmat1257 journal journal
			Nat. Mater. volume 3, pages 868
		(year 2004)NoStop
	[Parkin et al.(2004)Parkin,
		Kaiser, Panchula, Rice,
		Hughes, Samant, and Yang]NM-3-2004-2
	author author S. S. P.			Parkin, author C. Kaiser, author A. Panchula,
		author P. M. Rice, author B. Hughes, author
		M. Samant, and author
		S.-H. Yang, title title Giant tunnelling magnetoresistance at room temperature with MgO
			(100) tunnel barriers, https://doi.org/10.1038/nmat1256 journal journal Nat. Mater. volume
			3, pages 862 (year 2004)NoStop
	[ ŠŠmejkal et al.(2022a) ŠŠmejkal, Sinova, and Jungwirth]PRX-12-031042-2022
	author author L.  ŠŠmejkal, author J. Sinova, and author T. Jungwirth, title title
		Beyond conventional ferromagnetism and antiferromagnetism: A phase with
			nonrelativistic spin and crystal rotation symmetry, https://doi.org/10.1103/PhysRevX.12.031042 journal journal Phys. Rev. X volume 12, pages 031042 (year 2022a)NoStop
	[ ŠŠmejkal et al.(2022b) ŠŠmejkal, Sinova, and Jungwirth]PRX-12-040501-2022
	author author L.  ŠŠmejkal, author J. Sinova, and author T. Jungwirth, title title
		Emerging research landscape of altermagnetism, https://doi.org/10.1103/PhysRevX.12.040501 journal journal Phys. Rev. X volume 12, pages 040501 (year 2022b)NoStop
	[Krempaský et al.(2024)Krempaský, Šmejkal, D'Souza,
		Hajlaoui, Springholz, Uhlířová, Alarab, Constantinou, Strocov, Usanov,
		Pudelko, González-Hernández,
		Birk Hellenes, Jansa, Reichlová, Šobáň, Gonzalez Betancourt, Wadley, Sinova,
		Kriegner, Minár, Dil,		and Jungwirth]N-2024
	author author J. Krempaský, author L. Šmejkal, author S. W. D'Souza, author M. Hajlaoui,
		author G. Springholz, author K. Uhlířová, author F. Alarab, author
		P. C. Constantinou, author
		V. Strocov, author D. Usanov, author W. R.			Pudelko, author R. González-Hernández, author A. Birk Hellenes, author Z. Jansa, author H. Reichlová, author Z. Šobáň, author R. D. Gonzalez Betancourt, author
		P. Wadley, author J. Sinova, author D. Kriegner, author J. Minár, author J. H.			Dil, and author T. Jungwirth, title title Altermagnetic lifting
			of kramers spin degeneracy, https://doi.org/10.1038/s41586-023-06907-7 journal journal Nature volume 626, pages
		517 (year 2024)NoStop
	[Shao and Tsymbal(2024)]npj2024
	author author D.-F. Shao and author E. Y. Tsymbal, title title Antiferromagnetic tunnel
			junctions for spintronics, https://doi.org/10.1038/s44306-024-00014-7 journal journal npj Spintronics volume 2, pages 13 (year 2024)NoStop
	[Shao et al.(2023)Shao,
		Jiang, Ding, Zhang,
		Wang, Xiao, Gurung,
		Lu, Sun, and Tsymbal]PRL-130-2023
	author author D.-F. Shao, author Y.-Y. Jiang,
		author J. Ding, author
		S.-H. Zhang, author
		Z.-A. Wang, author
		R.-C. Xiao, author
		G. Gurung, author W. J. Lu, author Y. P.			Sun, and author E. Y.			Tsymbal, title title Néel spin
			currents in antiferromagnets, https://doi.org/10.1103/PhysRevLett.130.216702 journal
		journal Phys. Rev. Lett. volume 130,		pages 216702 (year 2023)NoStop
	[Leiviskä et al.(2024)Leiviskä, Rial, Bad'ura, Seeger, Kounta, Beckert, Kriegner, Joumard, Schmoranzerová,
		Sinova, Gomonay, Thomas,
		Goennenwein, Reichlová,  ŠŠmejkal, Michez,
		Jungwirth, and Baltz]PRB-109-2024-224430
	author author M. Leiviskä, author J. Rial,
		author A. Bad'ura, author R. L. Seeger, author
		I. Kounta, author S. Beckert, author D. Kriegner, author I. Joumard, author E. Schmoranzerová, author J. Sinova, author O. Gomonay, author A. Thomas, author S. T. B.			Goennenwein, author H. Reichlová, author L.  ŠŠmejkal, author L. Michez, author
		T. c. v. Jungwirth, and author
		V. Baltz, title title Anisotropy of the anomalous Hall effect in thin films of the
				altermagnet candidate Mn_5Si_3, https://doi.org/10.1103/PhysRevB.109.224430 journal journal Phys. Rev. B volume 109, pages 224430 (year 2024)NoStop
	[Mazin(2023)]PRB-107-2023
	author author I. I. Mazin, title title Altermagnetism in MnTe:
			Origin, predicted manifestations, and routes to detwinning, https://doi.org/10.1103/PhysRevB.107.L100418 journal
		journal Phys. Rev. B volume 107,		pages L100418 (year 2023)NoStop
	[Lee et al.(2024)Lee,
		Lee, Jung, Jung,
		Kim, Lee, Seok, Kim, Park,  ŠŠmejkal, Kang, and Kim]PRL-132-2024
	author author S. Lee, author S. Lee, author S. Jung, author
		J. Jung, author D. Kim, author Y. Lee, author B. Seok, author J. Kim, author
		B. G. Park, author
		L.  ŠŠmejkal,
		author C.-J. Kang, and		author C. Kim, title title Broken kramers degeneracy in altermagnetic mnte,	https://doi.org/10.1103/PhysRevLett.132.036702 journal
		journal Phys. Rev. Lett. volume 132,		pages 036702 (year 2024)NoStop
	[Banerjee and Scheurer(2024)]PRB-110-2024-024503
	author author S. Banerjee and author M. S. Scheurer, title title Altermagnetic
			superconducting diode effect, https://doi.org/10.1103/PhysRevB.110.024503 journal journal Phys. Rev. B volume 110, pages 024503 (year 2024)NoStop
	[Antonenko et al.(2024)Antonenko, Fernandes, and Venderbos]arXiv10201
	author author D. S. Antonenko, author R. M. Fernandes, and author J. W. F. Venderbos, @noop  title Mirror chern bands and weyl
			nodal loops in altermagnets (year 2024), https://arxiv.org/abs/2402.10201 arXiv:2402.10201 NoStop
	[Das and Roy(2024)]arXiv14620
	author author S. K. Das and author B. Roy,	@noop  title From local to emergent altermagnetism:
			Footprints of free fermions band topology (year 2024),	https://arxiv.org/abs/2403.14620 arXiv:2403.14620 NoStop
	[Zhu et al.(2024)Zhu,
		Chen, Li, Qiao, Ma, Liu, Hu, Gao, and		Ren]NL-2024
	author author Y. Zhu, author T. Chen, author Y. Li, author
		L. Qiao, author X. Ma, author C. Liu, author T. Hu, author H. Gao, and author
		W. Ren, title title Multipiezo effect in altermagnetic V_2SeTeO monolayer, https://doi.org/10.1021/acs.nanolett.3c04330 journal
		journal Nano Lett. volume 24,		pages 472 (year 2024)NoStop
	[Shao et al.(2021)Shao,
		Zhang, Li, Eom, and		Tsymbal]NC-2021
	author author D.-F. Shao, author S.-H. Zhang,
		author M. Li, author
		C.-B. Eom, and author
		E. Y. Tsymbal, title
	title Spin-neutral currents for spintronics, https://doi.org/10.1038/s41467-021-26915-3 journal journal Nat. Commun. volume 12, pages 7061 (year 2021)NoStop
	[Dong et al.(2022)Dong,
		Li, Gurung, Zhu,
		Zhang, Zheng, Tsymbal, and		Zhang]PRL-128-2022
	author author J. Dong, author X. Li, author G. Gurung, author
		M. Zhu, author P. Zhang, author F. Zheng, author E. Y.			Tsymbal, and author J. Zhang, title title Tunneling
			magnetoresistance in noncollinear antiferromagnetic tunnel junctions,	https://doi.org/10.1103/PhysRevLett.128.197201 journal
		journal Phys. Rev. Lett. volume 128,		pages 197201 (year 2022)NoStop
	[Qin et al.(2023)Qin,
		Yan, Wang, Chen,
		Meng, Dong, Zhu,
		Cai, Feng, Zhou,
		Liu, Zhang, Zeng,
		Zhang, Jiang, and Liu]N-613-485-2023
	author author P. Qin, author H. Yan, author X. Wang, author
		H. Chen, author Z. Meng, author J. Dong, author M. Zhu, author J. Cai, author
		Z. Feng, author X. Zhou, author L. Liu, author T. Zhang, author Z. Zeng, author
		J. Zhang, author C. Jiang, and author Z. Liu, title title
		Room-temperature magnetoresistance in an all-antiferromagnetic tunnel
			junction, https://doi.org/10.1038/s41586-022-05461-y journal journal Nature volume 613,		pages 485 (year 2023)NoStop
	[Chen et al.(2023)Chen,
		Higo, Tanaka, Nomoto,
		Tsai, Idzuchi, Shiga,
		Sakamoto, Ando, Kosaki,
		Matsuo, Nishio-Hamane, Arita,
		Miwa, and Nakatsuji]N-613-490-2023
	author author X. Chen, author T. Higo, author K. Tanaka, author
		T. Nomoto, author H. Tsai, author H. Idzuchi, author M. Shiga,
		author S. Sakamoto, author R. Ando, author
		H. Kosaki, author T. Matsuo, author D. Nishio-Hamane, author R. Arita, author S. Miwa, and author S. Nakatsuji, title title
		Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction,	https://doi.org/10.1038/s41586-022-05463-w journal
		journal Nature volume 613, pages 490 (year 2023)NoStop
	[Jiang et al.(2023)Jiang,
		Wang, Samanta, Zhang,
		Xiao, Lu, Sun, Tsymbal, and Shao]PRB-108-2023
	author author Y.-Y. Jiang, author Z.-A. Wang,
		author K. Samanta, author S.-H. Zhang, author
		R.-C. Xiao, author
		W. J. Lu, author Y. P. Sun, author E. Y.			Tsymbal, and author D.-F.			Shao, title title Prediction of
			giant tunneling magnetoresistance in RuO_2/TiO_2/RuO_2 (110)
			antiferromagnetic tunnel junctions, https://doi.org/10.1103/PhysRevB.108.174439 journal journal Phys. Rev. B volume 108, pages 174439 (year 2023)NoStop
	[ ŠŠmejkal et al.(2022c) ŠŠmejkal, Hellenes, González-Hernández, Sinova, and Jungwirth]PRX-12-011028-2022
	author author L.  ŠŠmejkal, author A. B. Hellenes, author R. González-Hernández, author J. Sinova, and author T. Jungwirth, title title Giant
			and tunneling magnetoresistance in unconventional collinear antiferromagnets
			with nonrelativistic spin-momentum coupling, https://doi.org/10.1103/PhysRevX.12.011028 journal journal Phys. Rev. X volume 12, pages 011028 (year 2022c)NoStop
	[Xu et al.(2023)Xu,
		Zhang, Mahfouzi, Huang,
		Cheng, Dai, Cai,
		Shi, Zhu, Guo, Cao, Liu, Fert, Kioussis,
		Wang, Zhang., and Zhao]arXiv02458
	author author S. Xu, author Z. Zhang, author F. Mahfouzi, author
		Y. Huang, author H. Cheng, author B. Dai, author W. Cai, author K. Shi, author D. Zhu, author
		Z. Guo, author C. Cao, author Y. Liu, author A. Fert, author N. Kioussis, author
		K. L. Wang, author
		Y. Zhang., and author
		W. Zhao, @noop  title
		Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel
			junction (year 2023), https://arxiv.org/abs/2311.02458 arXiv:2311.02458 NoStop
	[Gurung et al.(2023)Gurung,
		Shao, and Tsymbal]arXiv03026
	author author G. Gurung, author D.-F. Shao,		and author E. Y. Tsymbal,	@noop  title Extraordinary tunneling magnetoresistance
			in antiferromagnetic tunnel junctions with antiperovskite electrodes
	(year 2023), https://arxiv.org/abs/2306.03026
	arXiv:2306.03026 NoStop
	[Yuan et al.(2020)Yuan,
		Wang, Luo, Rashba, and		Zunger]PRB-102-2020
	author author L.-D. Yuan, author Z. Wang, author J.-W. Luo, author
		E. I. Rashba, and author
		A. Zunger, title title Giant momentum-dependent spin splitting in centrosymmetric low-Z
			antiferromagnets, https://doi.org/10.1103/PhysRevB.102.014422
	journal journal Phys. Rev. B volume 102, pages 014422 (year
		2020)NoStop
	[Yuan et al.(2021)Yuan,
		Wang, Luo, and Zunger]PRM-2021
	author author L.-D. Yuan, author Z. Wang, author J.-W. Luo, and author
		A. Zunger, title title Prediction of low-Z collinear and noncollinear antiferromagnetic
			compounds having momentum-dependent spin splitting even without spin-orbit
			coupling, https://doi.org/10.1103/PhysRevMaterials.5.014409
	journal journal Phys. Rev. Mater. volume 5, pages 014409 (year
		2021)NoStop
	[Hayami et al.(2019)Hayami,
		Yanagi, and Kusunose]JPSJ-2019
	author author S. Hayami, author Y. Yanagi,		and author H. Kusunose,	title title Momentum-dependent spin splitting by
			collinear antiferromagnetic ordering, https://doi.org/10.7566/JPSJ.88.123702 journal journal J. Phys. Soc. Jpn. volume 88, pages 123702 (year 2019)NoStop
	[SM()]SM
	@noop  journal See Supplemental Material at [url] for
				details of first-principles calculations; the spin splitting band structures
				of FeF_2, the conduction channels of RuO_2, IrO_2 and CrO_2; the
				atomic structures and transmission coefficient distributions of
				RuO_2(001)/FeF_2/IrO_2 MTJ; the atomic and electronic structures, and
				the lowest decay rate distributions of MnF_2; simple model of the
				dependence of TMR ratio on the spin filtering barrier thickness, which
			includes Refs.
			<cit.>	NoStop
	[Belashchenko et al.(2004)Belashchenko, Tsymbal, van Schilfgaarde,
		Stewart, Oleynik, and Jaswal]PRB-69-2004-2
	journal   author author K. D. Belashchenko, author E. Y. Tsymbal, author M. van Schilfgaarde, author D. A. Stewart, author I. I.			Oleynik, and author S. S.			Jaswal, title title Effect of
			interface bonding on spin-dependent tunneling from the oxidized Co
			surface, https://doi.org/10.1103/PhysRevB.69.174408 journal journal Phys. Rev. B volume
			69, pages 174408 (year 2004)NoStop
	[Velev et al.(2007)Velev,
		Duan, Belashchenko, Jaswal,		and Tsymbal]PRL-98-2007
	author author J. P. Velev, author C.-G. Duan,
		author K. D. Belashchenko,
		author S. S. Jaswal, and		author E. Y. Tsymbal,	title title Effect of ferroelectricity on electron
			transport in Pt/BaTiO_3/Pt tunnel
			junctions, https://doi.org/10.1103/PhysRevLett.98.137201
	journal journal Phys. Rev. Lett. volume 98, pages 137201 (year
		2007)NoStop
	[Chi et al.(2024)Chi,
		Jiang, Zhu, Yu, Wan, Zhang, and Han]PRA-21-2024
	author author B. Chi, author L. Jiang, author Y. Zhu, author
		G. Yu, author C. Wan, author J. Zhang, and author X. Han,	title title Crystal-facet-oriented altermagnets
			for detecting ferromagnetic and antiferromagnetic states by giant tunneling
			magnetoresistance, https://doi.org/10.1103/PhysRevApplied.21.034038 journal
		journal Phys. Rev. Appl. volume 21,		pages 034038 (year 2024)NoStop
	[Samanta et al.(2024)Samanta, Jiang, Paudel, Shao, and Tsymbal]PRB-109-2024
	author author K. Samanta, author Y.-Y. Jiang,
		author T. R. Paudel, author D.-F. Shao, and author E. Y. Tsymbal, title title Tunneling magnetoresistance in magnetic tunnel
			junctions with a single ferromagnetic electrode, https://doi.org/10.1103/PhysRevB.109.174407 journal journal Phys. Rev. B volume 109, pages 174407 (year 2024)NoStop
	[Santos-Ortiz et al.(2013)Santos-Ortiz, Volkov, Schmid, Kuo, Kisslinger, Nag, Banerjee, Zhu, and Shepherd]ACSAMI-2013
	author author R. Santos-Ortiz, author V. Volkov, author S. Schmid,
		author F.-L. Kuo, author K. Kisslinger, author
		S. Nag, author R. Banerjee, author Y. Zhu, and author N. D.			Shepherd, title title
		Microstructure and electronic band structure of pulsed laser deposited iron
			fluoride thin film for battery electrodes, https://doi.org/10.1021/am3017569 journal journal ACS Appl. Mater. Interfaces volume 5,		pages 2387 (year 2013)NoStop
	[Song et al.(2018)Song,
		Cai, Tu, Zhang, Huang, Wilson, Seyler, Zhu,
		Taniguchi, Watanabe, McGuire,
		Cobden, Xiao, Yao, and		Xu]S-2018
	author author T. Song, author X. Cai, author M. W.-Y. Tu, author
		X. Zhang, author B. Huang, author N. P.			Wilson, author K. L.			Seyler, author L. Zhu, author T. Taniguchi,
		author K. Watanabe, author M. A. McGuire, author
		D. H. Cobden, author
		D. Xiao, author W. Yao, and author X. Xu, title title Giant
			tunneling magnetoresistance in spin-filter van der waals heterostructures,	https://doi.org/10.1126/science.aar4851 journal
		journal Science volume 360, pages 1214 (year 2018)NoStop
	[Song et al.(2019)Song,
		Tu, Carnahan, Cai,
		Taniguchi, Watanabe, McGuire,
		Cobden, Xiao, Yao, and		Xu]NL-2019
	author author T. Song, author M. W.-Y. Tu,
		author C. Carnahan, author X. Cai, author
		T. Taniguchi, author
		K. Watanabe, author
		M. A. McGuire, author
		D. H. Cobden, author
		D. Xiao, author W. Yao, and author X. Xu, title title Voltage
			control of a van der waals spin-filter magnetic tunnel junction, https://doi.org/10.1021/acs.nanolett.8b04160 journal
		journal Nano Lett. volume 19,		pages 915 (year 2019)NoStop
	[Momma and Izumi(2011)]JAC-2011
	author author K. Momma and author F. Izumi,	title title VESTA3 for three-dimensional
				visualization of crystal, volumetric and morphology data, https://doi.org/10.1107/S0021889811038970 journal journal J. Appl. Cryst. volume 44, pages 1272 (year 2011)NoStop
	[Kresse and Furthmüller(1996)]PRB-54-1996
	author author G. Kresse and author J. Furthmüller, title title Efficient iterative
			schemes for ab initio total-energy calculations using a plane-wave basis
			set, https://doi.org/10.1103/PhysRevB.54.11169 journal journal Phys. Rev. B volume
			54, pages 11169 (year 1996)NoStop
	[Blöchl(1994)]PRB-50-1994
	author author P. E. Blöchl, title title Projector augmented-wave
			method, https://doi.org/10.1103/PhysRevB.50.17953 journal journal Phys. Rev. B volume
			50, pages 17953 (year 1994)NoStop
	[Kresse and Joubert(1999)]PRB-59-1999
	author author G. Kresse and author D. Joubert, title title From ultrasoft
			pseudopotentials to the projector augmented-wave method, https://doi.org/10.1103/PhysRevB.59.1758 journal journal Phys. Rev. B volume 59, pages 1758 (year 1999)NoStop
	[Perdew et al.(1996)Perdew,
		Burke, and Ernzerhof]PRL-77-1996
	author author J. P. Perdew, author K. Burke, and		author M. Ernzerhof, title title Generalized gradient approximation made simple,	https://doi.org/10.1103/PhysRevLett.77.3865 journal
		journal Phys. Rev. Lett. volume 77,		pages 3865 (year 1996)NoStop
	[Anisimov et al.(1991)Anisimov, Zaanen, and Andersen]PRB-44-1991
	author author V. I. Anisimov, author J. Zaanen,		and author O. K. Andersen,	title title Band theory and Mott insulators:
			Hubbard U instead of Stoner I, https://doi.org/10.1103/PhysRevB.44.943 journal journal Phys. Rev. B volume 44, pages 943 (year 1991)NoStop
	[Dudarev et al.(1998)Dudarev, Botton, Savrasov, Humphreys, and Sutton]PRB-57-1998
	author author S. L. Dudarev, author G. A. Botton,
		author S. Y. Savrasov, author C. J. Humphreys, and author A. P. Sutton, title
	title Electron-energy-loss spectra and the structural stability
			of nickel oxide: An LSDA+U study, https://doi.org/10.1103/PhysRevB.57.1505 journal journal Phys. Rev. B volume 57, pages 1505 (year 1998)NoStop
	[Haines et al.(1997)Haines,
		Léger, Schulte, and Hull]AC-1997
	author author J. Haines, author J. M. Léger, author O. Schulte, and author S. Hull, title title Neutron Diffraction Study
				of the Ambient-Pressure, Rutile-Type and the High-Pressure, CaCl2-Type Phases of Ruthenium Dioxide, https://doi.org/10.1107/S0108768197008094 journal journal Acta Crystallogr. Sect. B: Struct. Sci. volume 53, pages 880 (year 1997)NoStop
	[Berlijn et al.(2017)Berlijn, Snijders, Delaire, Zhou, Maier, Cao, Chi,
		Matsuda, Wang, Koehler,
		Kent, and Weitering]PRL-118-2017
	author author T. Berlijn, author P. C. Snijders, author O. Delaire,
		author H.-D. Zhou, author T. A. Maier, author
		H.-B. Cao, author S.-X. Chi, author M. Matsuda, author Y. Wang, author M. R.			Koehler, author P. R. C.			Kent, and author H. H.			Weitering, title title Itinerant
			antirromagnetism in RuO_2, https://doi.org/10.1103/PhysRevLett.118.077201 journal
		journal Phys. Rev. Lett. volume 118,		pages 077201 (year 2017)NoStop
	[Strempfer et al.(2001)Strempfer, Rütt, and Jauch]PRL-86-2001
	author author J. Strempfer, author U. Rütt,		and author W. Jauch, title title Absolute spin magnetic moment of
			FeF_2 from high energy photon diffraction, https://doi.org/10.1103/PhysRevLett.86.3152 journal journal Phys. Rev. Lett. volume 86, pages 3152 (year 2001)NoStop
	[Strempfer et al.(2004)Strempfer, Rütt, Bayrakci, Brückel, and Jauch]PRB-69-2004-1
	author author J. Strempfer, author U. Rütt,
		author S. P. Bayrakci, author T. Brückel, and author W. Jauch, title
	title Magnetic properties of transition metal fluorides
			MF_2 (M=Mn, Fe, Co, Ni) via high-energy
			photon diffraction, https://doi.org/10.1103/PhysRevB.69.014417
	journal journal Phys. Rev. B volume 69, pages 014417 (year
		2004)NoStop
	[Goering et al.(2002)Goering, Bayer, Gold, Schütz, Rabe, Rüdiger, and		Güntherodt]PRL-88-2002
	author author E. Goering, author A. Bayer,
		author S. Gold, author
		G. Schütz, author
		M. Rabe, author U. Rüdiger, and author G. Güntherodt, title title
		Strong Anisotropy of Projected 3d Moments in Epitaxial CrO_2
			Films, https://doi.org/10.1103/PhysRevLett.88.207203 journal journal Phys. Rev. Lett. volume 88, pages 207203 (year
		2002)NoStop
	[Taylor et al.(2001)Taylor,
		Guo, and Wang]PRB-63-2001-3
	author author J. Taylor, author H. Guo, and		author J. Wang, title title Ab initio modeling of quantum transport properties
			of molecular electronic devices, https://doi.org/10.1103/PhysRevB.63.245407 journal journal Phys. Rev. B volume 63, pages 245407 (year 2001)NoStop



