section_path: History
section_name: History
paragraph_text: History
  
  An early attempt at combining several components in one device (like modern ICs) was the Loewe 3NF vacuum tube first made in 1926. Unlike ICs, it was designed with the purpose of tax avoidance, as in Germany, radio receivers had a tax that was levied depending on how many tube holders a radio receiver had. It allowed radio receivers to have a single tube holder. One million were manufactured, and were "a first step in integration of radioelectronic devices". The device contained an amplifier, composed of three triodes, two capacitors and four resistors in a six-pin device. Radios with the Loewe 3NF were less expensive than other radios, showing one of the advantages of integration over using discrete components, that would be seen decades later with ICs.
  
  Early concepts of an integrated circuit go back to 1949, when German engineer Werner Jacobi (Siemens AG) filed a patent for an integrated-circuit-like semiconductor amplifying device showing five transistors on a common substrate in a three-stage amplifier arrangement. Jacobi disclosed small and cheap hearing aids as typical industrial applications of his patent. An immediate commercial use of his patent has not been reported.
  
  Another early proponent of the concept was Geoffrey Dummer (1909–2002), a radar scientist working for the Royal Radar Establishment of the British Ministry of Defence. Dummer presented the idea to the public at the Symposium on Progress in Quality Electronic Components in Washington, D.C., on 7 May 1952. He gave many symposia publicly to propagate his ideas and unsuccessfully attempted to build such a circuit in 1956. Between 1953 and 1957, Sidney Darlington and Yasuo Tarui (Electrotechnical Laboratory) proposed similar chip designs where several transistors could share a common active area, but there was no electrical isolation to separate them from each other.
  
  The monolithic integrated circuit chip was enabled by the inventions of the planar process by Jean Hoerni and p–n junction isolation by Kurt Lehovec. Hoerni's invention was built on Carl Frosch and Lincoln Derick's work on surface protection and passivation by silicon dioxide masking and predeposition, as well as Fuller, Ditzenberger's and others work on the diffusion of impurities into silicon.