A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.
Please help me write a proper abstract based on the patent claims. CLAIM: 1-16. (canceled) 17. A plurality of Josephson junction (JJ) quantum bit (qubits) arranged on a substrate, each of the plurality of qubits comprising: a dielectric layer; a superconductor base layer portion underlying the dielectric layer and having a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction; and a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits. 18. The plurality of qubits of claim 17, wherein the first and second dielectric diffusion regions of a given JJ qubit define the critical current density as a second critical current density shifted from a first critical current density defined by dimension of the given JJ qubit. 19. The plurality of qubits of claim 17, wherein the dielectric layer of each qubit is aluminum oxide (Al2O3), and each of the superconductor base layer portion and superconductor mesa layer portion are either one of aluminum (Al) and aluminum-copper (Al—Cu). 20. The plurality of qubits of claim 17, wherein the dielectric layer of each qubit is formed of a dielectric material that provides for hardening the superconductor-dielectric junction against junction travel and/or subsequent diffusion resulting from additional processing and each of the superconductor base layer portion and superconductor mesa layer portion are niobium (Nb). 21. The plurality of qubits of claim 17, wherein a pattern of extended openings separate each of the plurality of qubits from an adjacent qubit. 22. The plurality of qubits of claim 17, wherein the plurality of qubits are formed on an insulting layer that resides between the plurality of qubits and the substrate. 23. The plurality of qubits of claim 17, wherein the superconductor base layer portion and superconductor mesa layer portion are aligned with one another. 24. The plurality of qubits of claim 17, wherein the dielectric layer is one of HfO2 and Y2O3. 25. The plurality of qubits of claim 17, further comprising one or more conductive lines and contacts connecting to the plurality of qubits. 26. The plurality of qubits of claim 18, wherein the second critical current density is defined by an annealing temperature. 27. A plurality of Josephson junction (JJ) quantum bit (qubits) separated by a pattern of extended openings and arranged on an insulting layer that resides between the plurality of qubits and a substrate, each of the plurality of qubits comprising: a superconductor base layer portion underlying a dielectric layer and having a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction; and a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits, the superconductor base layer portion and superconductor mesa layer portion being aligned with one another, wherein the first and second dielectric diffusion regions of a given JJ qubit define the critical current density as a second critical current density shifted from a first critical current density defined by a dimension of the given JJ qubit.