A method for updating a weight of a synapse of a neuromorphic device is provided. The synapse may include a transistor and a memristor. The memristor may have a first electrode coupled to a source electrode of the transistor. The method may include inputting a row spike to a drain electrode of the transistor at a first time; inputting a column spike to a second electrode of the memristor at a second time; inputting a row pulse to the drain electrode of the transistor at a third time that is delayed by a first delay time from the second time; inputting a column pulse to the second electrode of the memristor at a fourth time that is delayed by a second delay time from the second time; and inputting a gating pulse to a gate electrode of the transistor at a fifth time that is delayed by a third delay time from the fourth time.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A method for updating a weight of a synapse of a neuromorphic device, the synapse including a transistor and a memristor, the memristor having a first electrode coupled to a source electrode of the transistor, the method comprising: inputting a row spike to a drain electrode of the transistor at a first time; inputting a column spike to a second electrode of the memristor at a second time; inputting a row pulse to the drain electrode of the transistor at a third time that is delayed by a first delay time from the second time; inputting a column pulse to the second electrode of the memristor at a fourth time that is delayed by a second delay time from the second time; and inputting a gating pulse to a gate electrode of the transistor at a fifth time that is delayed by a third delay time from the fourth time. 2. The method according to claim 1, wherein the row spike is generated by a pre-synaptic neuron, and is inputted to the drain electrode of the transistor through a row line. 3. The method according to claim 1, wherein the column spike is generated by a post-synaptic neuron, and is inputted to the second electrode of the memristor through a column line. 4. The method according to claim 1, wherein the row pulse is generated by the pre-synaptic neuron, and is inputted to the drain electrode of the transistor through a row line. 5. The method according to claim 1, wherein the column pulse is generated by the post-synaptic neuron, and is inputted to the second electrode of the memristor through a column line. 6. The method according to claim 1, wherein the row spike and the column spike are generated while a gating signal is inputted to the gate electrode of the transistor. 7. The method according to claim 6, wherein the gating signal is generated by a gating controller, and is inputted to the gate electrode of the transistor through a gating line. 8. The method according to claim 1, wherein the updating of the weight of the synapse is performed for a time period in which an overlay of the row pulse and the column pulse overlaps the gating pulse. 9. A method for updating a weight of a synapse of a neuromorphic device, the method comprising: inputting, by a first neuron, a first spike to a first synapse at a first time; inputting, by a second neuron, a second spike to a second synapse at a second time that is delayed from the first time; inputting, by a third neuron, a third spike to each of the first synapse and the second synapse at a third time; inputting, by the first neuron, a first pulse to the first synapse at a fourth time that is delayed from the third time; inputting, by the second neuron, a second pulse to the second synapse at a fifth time that is delayed from the third time; inputting, by the third neuron, a third pulse to each of the first synapse and the second synapse at a sixth time; inputting a first gating pulse to the first synapse at a seventh time; and inputting a second gating pulse to the second synapse at an eighth time. 10. The method according to claim 9, wherein, if a first spike time difference from the first time to the third time is shorter than a second spike time difference from the second time to the third time, a first gating time difference from the sixth time to the seventh time is shorter than a second gating time difference from the sixth time to the eight time. 11. The method according to claim 10, wherein, if the first gating time difference is shorter than the second gating time difference, a weight of the first synapse is updated over a longer time period than a weight of the second synapse. 12. The method according to claim 9, wherein the first synapse includes a first transistor and a first memristor, the first memristor having a first electrode coupled to a source electrode of the first transistor, wherein the second synapse includes a second transistor and a second memristor, the second memristor having a first electrode coupled to a source electrode of the second transistor, wherein the first neuron is coupled to a drain electrode of the first transistor, wherein the second neuron is coupled to a drain electrode of the second transistor, and wherein the third neuron is coupled to a second electrode of the first memristor and a second electrode of the second memristor. 13. The method according to claim 12, wherein the first gating pulse is generated by a first gating controller that is coupled to a gate electrode of the first transistor, and wherein the second gating pulse is generated by a second gating controller that is coupled to a gate electrode of the second transistor. 14. The method according to claim 9, wherein the first and second neurons are first and second pre-synaptic neurons, and the third neuron is a post-synaptic neuron, and wherein the first and second synapses are coupled in common to the post-synaptic neuron. 15. The method according to claim 9, wherein the first and second neurons are first and second post-synaptic neurons, and the third neuron is a pre-synaptic neuron, and wherein the first and second synapses are coupled in common to the pre-synaptic neuron. 16. A method for updating weights of first and second synapses of a neuromorphic device, the first synapse including a first transistor and a first memristor, the first memristor having a first electrode coupled to a source electrode of the first transistor, the second synapse including a second transistor and a second memristor, the second memristor having a first electrode coupled to a source electrode of the second transistor, the method comprising: turning on the first transistor and the second transistor by inputting a first gating signal to a gate electrode of the first transistor and inputting a second gating signal to a gate electrode of the second transistor, the first gating signal being generated by a first gating controller, the second gating signal being generated by a second gating controller; inputting a first row spike to a drain electrode of the first transistor of the first synapse through a first row line, and inputting a second row spike to a drain electrode of the second transistor of the second synapse through a second row line, the first row spike being generated by a first pre-synaptic neuron coupled to the first synapse, the second row spike being generated by a second pre-synaptic neuron coupled to the second synapse; inputting a column spike generated by a post-synaptic neuron, which is coupled in common to the first synapse and the second synapse, to a second electrode of the first memristor and a second electrode of the second memristor through a column line; stopping the first and second gating signals from being input to thereby turn off the first transistor and the second transistor; inputting a first row pulse to the drain electrode of the first transistor and inputting a second row pulse to the drain electrode of the second transistor, the first row pulse being generated by the first pre-synaptic neuron, the second row pulse being generated by the second pre-synaptic neuron; inputting a column pulse to the second electrode of the first memristor and the second electrode of the second memristor, the column pulse being generated by the post-synaptic neuron; and inputting a first gating pulse to the gate electrode of the first transistor and inputting a second gating pulse to the gate electrode of the second transistor such that the first and second transistors are turned on in response to the first and second gating pulses, respectively, the first gating pulse being generated by the first gating controller, the second gating pulse being generated by the second gating controller. 17. The method according to claim 15, wherein, if a first spike time difference from a time when the first row spike is generated to a time when the column spike is generated is shorter than a second spike time difference from a time when the second row spike is generated to the time when the column spike is generated, a first gating time difference from a time when the column pulse is generated to a time when the first gating pulse is generated is shorter than a second gating time difference from the time when the column pulse is generated to a time when the second gating pulse is generated. 18. The method according to claim 17, wherein, if the first spike time difference is longer than the second spike time difference, the first gating time difference is longer than the second gating time difference. 19. The method according to claim 16, wherein the column pulse has a negative (−) voltage when the first and second row pulses have a positive (+) voltage. 20. The method according to claim 16, wherein the column pulse has a positive (+) voltage when the first and second row pulses have a negative (−) voltage.