An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. An ion trap device, comprising: a substrate; at least one central DC electrode disposed over the substrate and comprising: a DC connector pad, and a DC rail connected to the DC connector pad; an RF electrode disposed over the substrate and comprising: at least one RF rail located adjacent to the DC rail, and an RF pad connected to the at least one RF rail; at least one side electrode disposed over the substrate with the RF electrode disposed between the central DC electrode and the side electrode; and an insulating layer configured to support at least one of the central DC electrode, the RF electrode or the side electrode, on a top surface of the substrate, wherein the insulating layer includes a first insulating layer and a second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang that protrudes with respect to the first insulating layer in a width direction of the ion trap device. 2. The ion trap device of claim 1, wherein the central DC electrode comprises a first central DC electrode having a first DC rail and a second central DC electrode having a second DC rail, the first DC rail and the second DC rail are spaced apart from each other to form a trap region therebetween, and an entire thickness of the substrate is removed at a region corresponding to the trap region. 3. The ion trap device of claim 2, wherein the second insulating layer that supports the electrode close to the trap region includes the overhang. 4. The ion trap device of claim 2, wherein the overhang protrudes in a direction heading for the trap region. 5. The ion trap device of claim 1, wherein the at least one side electrode includes a plurality of side electrodes disposed at predetermined intervals in a longitudinal direction of the RF electrode. 6. The ion trap device of claim 1, wherein a sidewall of at least one of the first insulating layer or the second insulating layer has a conductive film formed thereon. 7. A method of manufacturing an ion trap device, the method comprising: forming a conductive film for a central DC electrode over a substrate; forming a pattern of a first insulating layer on the substrate by using a first mask; forming a pattern of a second insulating layer on the first insulating layer by using a second mask; and forming a conductive film on the pattern of the second insulating layer to form an electrode pattern of at least one of an RF electrode or a side electrode, wherein the second mask is patterned so that the pattern of the second insulating layer has an overhang protruding with respect to the pattern of the first insulating layer in a width direction of the ion trap device. 8. The method of claim 7, further comprising, after the forming of the pattern of the first insulating layer: filling a sacrificial layer in a space between the patterns of the insulating layers; and planarizing a top surface of the substrate by using a lapping process. 9. The method of claim 8, further comprising, after the forming of the pattern of the second insulating layer, selectively removing the sacrificial layer. 10. The method of claim 7, further comprising, after the forming of the pattern of the second insulating layer, forming a conductive film on at least one of a sidewall of the first insulating layer or a sidewall of the second insulating layer.