ACCEPTED
Please predict whether this patent is acceptable.PATENT ABSTRACT: A ktRAM architecture comprising a memory wherein each input synapse or “bit” of the memory interacts on or with a common electrode through a common “dendritic” electrode, and wherein each input can be individually driven. Each input constitutes a memory cell driving a common electrode. One or more AHaH nodes can be provided wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active.