In an embodiment, a memory controlled circuit includes a configurable circuit element electrically coupled to a first terminal and to a second terminal. The memory controlled circuit further includes a weight update circuit. A first input of the weight update circuit is electrically coupled to the first terminal and a second input of the weight update circuit is electrically coupled to the second terminal. The memory controlled circuit also includes a dynamic analog memory electrically coupled to the configurable circuit element and to the weight update circuit.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A memory controlled circuit comprising: a configurable circuit element electrically coupled to a first terminal and to a second terminal; a weight update circuit, wherein a first input of the weight update circuit is electrically coupled to the first terminal and a second input of the weight update circuit is electrically coupled to the second terminal; and a dynamic analog memory electrically coupled to the configurable circuit element and to the weight update circuit. 2. The memory controlled circuit of claim 1, wherein the weight update circuit comprises: a first exponential decay circuit, an input of the first exponential decay circuit coupled to the first terminal; a first switch, an input of the first switch coupled to an output of the first exponential decay circuit and an output of the first switch coupled to the dynamic analog memory, a controller of the first switch coupled to the second terminal; a second exponential decay circuit, an input of the second exponential decay circuit coupled to the second terminal; and a second switch, an input of the second switch coupled to an output of the second exponential decay circuit and an output of the second switch coupled to the dynamic analog memory, a controller of the second switch coupled to the first terminal. 3. The memory controlled circuit of claim 2, wherein the first exponential decay circuit comprises: a resistor; a capacitor coupled to the resister; and an third switch coupled to a voltage source, wherein a level of the voltage source corresponds to a peak spike level, wherein a controller of the third switch is coupled to the first terminal, wherein the third switch enables a voltage at the capacitor to charge to the peak spike level when activated, and wherein the voltage dissipates through the resistor when the third switch is disabled. 4. The memory controlled circuit of claim 3, wherein the resistor includes a transistor coupled with a biasing circuit, wherein the biasing circuit causes the transistor to generate a resistance. 5. The memory controlled circuit of claim 2, wherein the second exponential decay circuit comprises: a second resistor; a second capacitor coupled to the second resister; and a fourth switch coupled to a second voltage source, wherein a level of the second voltage source corresponds to a second peak spike level, wherein a controller of the fourth switch is coupled to the second terminal, wherein the fourth switch enables a voltage at the capacitor to charge to the second peak spike level when activated, and wherein the voltage dissipates through the second resistor when the fourth switch is disabled. 6. The memory controlled circuit of claim 2, wherein the weight update circuit further comprises: a first transconductor coupled between an output of the first exponential decay circuit and an input of the first switch; and a second transconductor coupled between an output of the second exponential decay circuit and an input of the second switch. 7. The memory controlled circuit of claim 2, wherein the weight update circuit further comprises: a transconductor, a first input of the transconductor coupled to an output of the first switch and a second input of the transconductor coupled to an output of the second switch, wherein an output of the first exponential decay circuit is coupled to an input of the first switch and an output of the second exponential decay circuit is coupled to an input of the second switch. 8. The memory controlled circuit of claim 7, further comprising: a third switch coupled between the transconductor and the dynamic analog memory, a controller of the third switch coupled to a strobe signal source. 9. The memory controlled circuit of claim 1, further comprising: a bi-stable memory element coupled to the dynamic analog memory, the bi-stable memory element configured to stabilize a state of the dynamic analog memory when activated. 10. The memory controlled circuit of claim 9, wherein the bi-stable memory element comprises: a first inverter; a second inverter; and a switch, wherein the first inverter and the second inverter hold a particular voltage at the capacitor when the switch is activated, and wherein the capacitor discharges when the switch is deactivated. 11. The memory controlled circuit of claim 1, integrated into a system of memory controlled circuits, the system including: at least one input neuron device; at least one output neuron device; wherein the at least one input neuron device is coupled to the at least one output neuron device via the first terminal and the second terminal. 12. A method comprising: receiving a first digital pulse at a first terminal; receiving a second digital pulse at a second terminal; in response to the second digital pulse, changing a value of a dynamic analog memory to a modified value, wherein a difference between the value and the modified value is based on a duration between a first time of the first digital pulse and a second time of the second digital pulse. 13. The method of claim 12, wherein an electrical property of a configurable circuit element positioned between the first terminal and the second terminal changes based on the modified value of the dynamic analog memory. 14. The method of claim 12, further comprising: in response to receiving the first digital pulse, generating an exponentially decaying voltage; and generating a current proportionally related to the exponentially decaying voltage; and electrically coupling the current to the dynamic analog memory during the second digital pulse. 15. The method of claim 12, further comprising: receiving a third digital pulse at the first terminal; and in response to the third digital pulse, changing a value of the dynamic analog memory to a second modified value, wherein a difference between the modified value and the second modified value is based on a duration between the second time of the second digital pulse and a third time of a third digital pulse. 16. The method of claim 15, further comprising: in response to receiving the second digital pulse, generating an exponentially decaying voltage; generating a current proportionally related to the exponentially decaying voltage; and electrically coupling the current to the dynamic analog memory during the third digital pulse. 17. The method of claim 12, further comprising holding a voltage level of the dynamic analog memory at a bi-stable memory element. 18. A method comprising: receiving a first digital pulse from a first neuron device; passing the first digital pulse to a second neuron device; receiving a second digital pulse from the second neuron device; passing the second digital pulse to the first neuron device; changing a value of a dynamic analog memory based on the first digital pulse and the second digital pulse. 19. The method of claim 18, wherein changing the value of the dynamic analog memory comprises increasing the value when the first digital pulse is received before the second digital pulse and decreasing the value when the first digital pulse is received after the second digital pulse. 20. The method of claim 18, wherein a magnitude of changing the value of the dynamic analog memory is based on a duration between the first digital pulse and the second digital pulse.