Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A material, comprising: one or more isotopes exhibiting substantially zero nuclear spin; and wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase. 2. The material as recited in claim 1, wherein the single crystal is structurally configured as a layer having a thickness from about 10 nm to about 10 um. 3. The material as recited in claim 1, wherein the single crystal substantially excludes one or more of: grain boundaries; impurities; crystalline lattice vacancies; surface defects; oxides formed on a surface of the single crystal; and patinas formed on the surface of the single crystal. 4. The material as recited in claim 1, wherein the one or more isotopes are selected from a group consisting of: molybdenum, tungsten, palladium, tellurium, platinum, silicon, lead, tin, zinc, indium, titanium, carbon, and oxygen. 5. The material as recited in claim 1, wherein the one or more isotopes are present as an alloy having a composition selected from MoSi, PdTe, PdSi, PtSi, WSi, and wherein all atoms of the alloy are characterized by substantially zero nuclear spin. 6. The material as recited in claim 1, further comprising a Pt film coating a surface of the single crystal, the Pt film having a thickness in a range from about 0.01 nm to about 1.0 nm. 7. The material as recited in claim 1, wherein the single crystal exhibits physical characteristics of formation by epitaxy. 8. The material as recited in claim 1, wherein a surface of the single crystal excludes oxides and patinas. 9. A single-electron transistor, comprising: the material as recited in claim 1. 10. A superconducting quantum bit comprising the material as recited in claim 1. 11. A superconducting quantum interference device (SQUID), comprising: a probe consisting of the material as recited in claim 1. 12. A method, comprising forming or obtaining the superconducting quantum interference device (SQUID) as recited in claim 11; placing the SQUID in proximity to a quantum object, wherein the proximity is sufficient to observe electromagnetic interaction between the SQUID and the quantum object; and measuring a magnetic flux passing through the SQUID, wherein the magnetic flux is generated solely in response to interaction between the SQUID and the quantum object rather than interactions within the SQUID. 13. A method, comprising: suppressing magnetic noise while performing one or more superconducting computations using the material as recited in claim 1, wherein the magnetic noise arises from one or more of localized electron moments and nuclear orientation effects within the superconducting computer. 14. A method, comprising: enriching one or more elements to obtain a precursor material consisting essentially of one or more zero-nuclear spin isotopes of the one or more elements; and forming the precursor material into a layer having a thickness in a range from about 0.3 nm to about 10 um. 15. The method as recited in claim 14, wherein the forming comprises epitaxially growing the layer to form a thin film single crystal on a substrate, wherein the thin film is characterized by a thickness in a range from about 0.3 nm to about 1.0 um. 16. The method as recited in claim 14, wherein the forming comprises growing a bulk single crystal from the precursor material, wherein the bulk single crystal excludes one or more of: grain boundaries; inclusions; impurities; and crystalline lattice vacancies. 17. The method as recited in claim 14, wherein the forming comprises: epitaxially growing the layer to form a single crystal having a thickness in a range from about 10 nm to about 10 um, affixing the bulk single crystal to a substrate having a plurality of pre-etched support structures; and forming a plurality of superconducting devices from the single crystal by using either an ion milling technique or a lithography technique. 18. The method as recited in claim 17, further comprising forming from the single crystal a plurality of bridges using either the ion milling technique or the lithography technique, wherein each pair of the adjacent superconducting devices is one or more of electrically coupled and physically coupled via the plurality of bridges, and wherein at least some of the bridges have dimensions approximately less than or equal to a healing length of the material, wherein each bridge is positioned between an adjacent pair of the superconducting devices, and wherein the bridges are configured as Josephson junctions. 19. The method as recited in claim 18, further comprising treating one or more surfaces of the superconducting devices to fix an orientation of one or more localized surface electron spins of the material. 20. The method as recited in claim 19, wherein the treating comprises applying a voltage across a localized portion of the surface(s) and a conductive enclosure surrounding the localized portion of the surface(s).