A neuromorphic device may include: pre-synaptic neurons; row lines extending in a first direction from the pre-synaptic neurons, respectively; post-synaptic neurons; column lines extending in a second direction from the post-synaptic neurons, respectively, the second direction crossing the first direction; and synapses arranged in intersection regions between the row lines and the column lines. The synapses may include resistor interconnections having various fixed resistance values. The synapses may be programmed with at least one pattern based on the various fixed resistance values.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A neuromorphic device comprising: pre-synaptic neurons; row lines extending in a first direction from the pre-synaptic neurons, respectively; post-synaptic neurons; column lines extending in a second direction from the post-synaptic neurons, respectively, the second direction crossing the first direction; and synapses arranged in intersection regions between the row lines and the column lines, wherein the synapses comprise resistor interconnections having various fixed resistance values, the synapses being programmed with at least one pattern based on the various fixed resistance values. 2. The neuromorphic device of claim 1, wherein the various fixed resistance values include at least four levels. 3. The neuromorphic device of claim 1, wherein the resistor interconnections are disposed in a substrate. 4. The neuromorphic device of claim 1, wherein the synapses comprise resistor interconnections that include conductive paths having different lengths, the different lengths respectively providing the various fixed resistance values. 5. The neuromorphic device of claim 1, wherein the synapses comprise resistor interconnections that contain ions doped at various concentrations, the various concentrations providing the various fixed resistance values. 6. The neuromorphic device of claim 5, wherein the resistor interconnections comprise silicon doped with N-type or P-type ions. 7. The neuromorphic device of claim 6, wherein the resistor interconnections are doped with N-type ions, the N-type ions including P (phosphorous) or As (arsenic) ions. 8. The neuromorphic device of claim 5, wherein each of the resistor interconnections comprises one or more doping regions having different doping concentrations. 9. The neuromorphic device of claim 8, wherein each of the resistor interconnections comprises one or more of a low-concentration doping region, a middle-concentration doping region, and a high-concentration doping region. 10. The neuromorphic device of claim 1, wherein each of the resistor interconnections comprises one or more resistance regions having different conductivities. 11. The neuromorphic device of claim 10, wherein each of the resistance regions includes one of an intrinsic semiconductor region, a low-concentration doped semiconductor region, a high-concentration doped semiconductor region, a metal silicide region, a metal compound region, a metal alloy region, and a metal region. 12. The neuromorphic device of claim 1, wherein each of the resistor interconnections is a silicon wiring, a metal silicide interconnection, or a metal interconnection. 13. The neuromorphic device of claim 1, wherein each of the synapses further comprises a row contact and a column contact, and wherein the resistor interconnection electrically connects the row contact and the column contact. 14. The neuromorphic device of claim 1, wherein each of the resistor interconnections comprises a plurality of via plugs that are electrically coupled to each other. 15. The neuromorphic device of claim 14, wherein the resistor interconnection further comprises a plurality of pads that are alternately stacked with the plurality of via plugs. 16. The neuromorphic device of claim 15, wherein the plurality of via plugs provides the various fixed resistance levels by having different vertical alignments. 17. The neuromorphic device of claim 15, wherein the plurality of via plugs provides the various fixed resistance levels by having different horizontal thicknesses. 18. The neuromorphic device of claim 1, wherein the post-synaptic neurons comprise post-synaptic circuits that are electrically connected to the column lines, respectively, each of the post-synaptic neurons comprising an integrator and a comparator, the integrator having an input unit connected to a corresponding one of the column lines, the comparator receiving an output of the integrator. 19. The neuromorphic device of claim 1, wherein the synapses coupled to one of the column lines are programmed to store a different pattern from synapses coupled to another one of the column lines.