A solid-state device for generating a single photon for quantum information processing, the device including: a quantum dot molecule including: a first singly-charged quantum dot; and a second singly-charged quantum dot; wherein the first singly-charged quantum dot is adjacent to the second singly-charged quantum dot; and a tunnel barrier that separates the first singly-charged quantum dot from the second singly-charged quantum dot.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A solid-state device for generating a single photon for quantum information processing, the device comprising: a quantum dot molecule comprising: a first singly-charged quantum dot; and a second singly-charged quantum dot adjacent to said first singly-charged quantum dot; and a tunnel barrier that separates said first singly-charged quantum dot from said second singly-charged quantum dot. 2. The device of claim 1, wherein said quantum dot molecule is configured to have energy levels comprising: a first energy level; a second energy level; and a third energy level, wherein said first energy level is lower than said second energy level and said second energy level is lower than said third energy level, and wherein said first energy level and said second energy level are closely spaced ground states and said third energy level is an optically excited state for said quantum dot molecule. 3. The device of claim 2, configured to be a stationary quantum memory wherein said first energy level and said second energy level are used as a qubit bit. 4. The device of claim 2, wherein said quantum dot molecule is in an optical cavity. 5. The device of claim 4, wherein said optical cavity comprises any of a photonic crystal cavity, a waveguide, and a pillar etched into a semiconductor substrate. 6. The device of claim 2, wherein said quantum dot molecule is configured to receive a laser beam, and wherein said laser beam triggers a Raman photon. 7. The device of claim 6, wherein a frequency of said Raman photon is shifted from a frequency of said laser beam by an exchange frequency, and wherein a thickness of said tunnel barrier determines said exchange frequency. 8. The device of claim 7, further configured to feed said Raman photon to a filter, said filter configured to filter said Raman photon from said laser beam. 9. The device of claim 1, wherein said first quantum dot and said second quantum dot comprise indium arsenide quantum dots grown in a gallium arsenide substrate, and wherein gallium arsenide of the substrate constitutes said tunnel barrier. 10. A method for generating a single photon for quantum information processing, said method comprising triggering a Raman photon by emitting a laser to a quantum dot molecule, wherein said quantum dot molecule comprises a first singly-charged quantum dot, and a second singly-charged quantum dot adjacent to said first singly-charged quantum dot. 11. The method of claim 10, wherein a tunnel barrier separates said first singly-charged quantum dot from said second singly-charged quantum dot, and wherein said quantum dot molecule is configured to have energy levels comprising: a first energy level; a second energy level; and a third energy level, wherein said first energy level is lower than said second energy level and said second energy level is lower than said third energy level, and wherein said first energy level and said second energy level are closely spaced ground states and said third energy level is an optically excited state for said quantum dot molecule. 12. The method of claim 11, further comprising shifting a frequency of said Raman photon from a frequency of said laser beam by an exchange frequency, wherein a thickness of said tunnel barrier determines said exchange frequency. 13. The method of claim 12, further comprising filtering said Raman photon from said laser beam. 14. The method of claim 11, further comprising growing indium arsenide quantum dots in a gallium arsenide substrate to create said first quantum dot and said second quantum dot, wherein gallium arsenide of the substrate constitutes said tunnel barrier. 15. The method of claim 13, further comprising using said first energy level and said second energy level of said quantum dot molecule as a qubit bit in a stationary quantum memory. 16. A system for generating a single photon comprising: a first singly-charged quantum dot; a second singly-charged quantum dot adjacent to said first singly-charged quantum dot; and a tunnel barrier that separates said first singly-charged quantum dot from said second singly-charged quantum dot. 17. The system of claim 16, further comprising an optical cavity for said first and second singly-charged quantum dots, wherein said optical cavity comprises any of a photonic crystal cavity, a waveguide, and a pillar etched into a semiconductor substrate. 18. The system of claim 16, wherein said first and second single-charged quantum dots are configured to have energy levels comprising: a first energy level; a second energy level; and a third energy level, wherein said first energy level is lower than said second energy level and said second energy level is lower than said third energy level, and wherein said first energy level and said second energy level are closely spaced ground states and said third energy level is an optically excited state for said first and second quantum dots. 19. The system of claim 18, further comprising a filter configured to filter said Raman photon from said laser beam. 20. The system of claim 16, wherein said first quantum dot and said second quantum dot comprise indium arsenide quantum dots grown in a gallium arsenide substrate, and wherein gallium arsenide of the substrate constitutes said tunnel barrier.