A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed thereform.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A method for controlling a quantum device comprising: placing an electrostatic species in proximity to a plurality of controllably quantum mechanically coupled dangling bonds so as to perturb an electronic state of said plurality of controllably quantum mechanically coupled dangling bonds of a material with each of said plurality of controllably quantum mechanically coupled dangling bonds having a separation from the remainder of said plurality of controllably quantum mechanically coupled dangling bonds of at least one atom of said material. 2. The method of claim 1 further comprising at least one electrode to sense localization dynamics of a coupled dangling bond from amongst said plurality of controllably quantum mechanically coupled dangling bonds, monitor the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds, or a combination thereof. 3. The method of claim 2 wherein said at least one electrode is above, below, or on a surface supporting said quantum device. 4. The method of claim 2 wherein said at least one electrode comprises at least one of a thin film contact, a nanowire, or a scanning tunneling microscopy (STM) tip. 5. The method of claim 4 wherein said STM tip is a single electrode device; and wherein said method further comprises using a first STM tip as a first logic input as a power source to perturb a dangling bond from amongst said plurality of controllably quantum mechanically coupled dangling bonds so as to perturb an electronic state of said plurality of controllably quantum mechanically coupled dangling bonds, and using a second STM tip to monitor a coupled dangling bond electronic state responding to said perturbed dangling bond. 6. The method of claim 1 wherein said material is silicon and each of said plurality of controllably quantum mechanically coupled dangling bonds extends from a silicon atom having silicon-silicon bonds. 7. The method of claim 1 wherein said plurality of controllably quantum mechanically coupled dangling bonds extend from a surface of said material. 8. The method of claim 1 wherein the separation is between 2 and 200 Angstroms inclusive. 9. The method of claim 1 wherein said separation is between 3 and 40 Angstroms inclusive. 10. The method of claim 1 wherein said plurality of controllably quantum mechanically coupled dangling bonds numbers 2, 3, 4, 5, or 6 dangling bonds. 11. The method of claim 1 wherein said at least one electrostatic perturbing dangling bond is two electrostatic dangling bonds diagonally placed relative to said plurality of controllably quantum mechanically coupled dangling bonds arranged as four dangling bonds forming a rectilinear four coupled dangling bond entity. 12. The method of claim 1 wherein said plurality of controllably quantum mechanically coupled dangling bonds are four dangling bonds forming a rectilinear four coupled dangling bond entity and further comprising at least one electrostatic perturbing dangling bond. 13. The method of claim 1 wherein said material further comprises a surface; and wherein said material supports a localized charge inducing an electrostatic potential extending at least 1 Angstrom from the surface. 14. The method of claim 1 wherein said plurality of controllably quantum mechanically coupled dangling bonds each has a dangling bond energy that is greater than a bulk semiconductor valence band edge and simultaneously lower in energy than a conduction band edge bottom for said material such that each of said plurality of controllably quantum mechanically coupled dangling bonds is energetically decoupled from the conduction band of said material. 15. The method of claim 1 further comprising at least one additional electron within said plurality of controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each of said at least one additional electron present. 16. The method of claim 15 wherein said electronic state of said plurality of controllably quantum mechanically coupled dangling bonds is stable at least to 293 degrees Kelvin. 17. The method of claim 1 wherein said plurality of controllably quantum mechanically coupled dangling bonds numbers 2 dangling bonds and a rate of tunneling ktun therebetween satisfies the equation: k mn = ω 2  π  Dp 1   e , ( 11 ) where ω/2π is a frequency of tunneling attempts, D is the tunnelling coefficient, and p1e is the probability of having 1 extra electron in said 2 dangling bonds. 18. The method of claim 1 further comprising suspending at least one electrode for selectively modifying the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds. 19. The method of claim 1 wherein the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds is one of an infinite set of superpositioned values intermediate between digital logic levels of 0 and 1. 20. The method of claim 5 wherein the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds is one of an infinite set of superpositioned values intermediate between digital logic levels of 0 and 1. 21. A quantum cellular automata comprising a plurality of quantum devices, each of the plurality of devices being formed according to claim 1; and interconnections therebetween. 22. The quantum cellular automata of claim 21 forming computations wherein said interconnections monitor the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds. 23. A method for controlling a quantum device comprising: suspending at least one electrode for selectively modifying an electronic state of said plurality of controllably quantum mechanically coupled dangling bonds in proximity to a plurality of controllably quantum mechanically coupled dangling bonds so as to perturb the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds of a material with each of said plurality of controllably quantum mechanically coupled dangling bonds having a separation from the remainder of said plurality of controllably quantum mechanically coupled dangling bonds of at least one atom of said material. 24. The method of claim 23 further comprising placing an electrostatic species in proximity to said plurality of controllably quantum mechanically coupled dangling bonds so as to perturb the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds of a material. 25. The method of claim 23 wherein the electronic state of said plurality of controllably quantum mechanically coupled dangling bonds is one of an infinite set of superpositioned values intermediate between digital logic levels of 0 and 1 measurable at a temperature of at least 293 Kelvin.