A thermodynamic RAM circuit composed of a group of AHaH (Anti-Hebbian and Hebbian) computing circuits that form one or more kT-RAM circuits. The AHaH computing circuits can be configured as an AHaH computing stack. The kTRAM circuit(s) can include one or core kT-Cores, each partitioned into AHaH nodes of any size via time multiplexing. The kT-Core couples readout electrodes together to form a larger combined kT-Core. AHaH Computing is the theoretical space encompassing the capabilities of AHaH nodes. At this level of development, solutions have been found for problems as diverse as classification, prediction, anomaly detection, clustering, feature learning, actuation, combinatorial optimization, and universal logic.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A thermodynamic RAM circuit, comprising: a collection of kT-Core circuits, wherein each kT-Core among said collection of core kT-Core circuits comprises an AHaH circuit with a RAM interface. 2. The circuit of claim 1 further comprising an instruction set for a kT-Core learning circuit among said collection of kT-Core circuits comprising said following instructions: FF,FH,FL,FU,FA,FZ, RF,RH,RL,RU,RA,RZ. 3. The circuit of claim 1 further comprising at least one kT-RAM circuit that comprises at least one kT-Core among said collection of said kT-Core circuits partitioned into AHaH nodes of any size via time multiplexing. 4. The circuit of claim 1 wherein at least one kT-Core circuit among said collection of kT-Core circuits couples readout electrodes together to form a larger combined kT-Core among said collection of kT-Core circuits. 5. The circuit of claim 2 further comprising at least one kT-RAM circuit that comprises at least one kT-Core among said collection of said kT-Core circuits partitioned into AHaH nodes of any size via time multiplexing. 6. The circuit of claim 2 wherein at least one kT-Core circuit among said collection of kT-Core circuits couples readout electrodes together to form a larger combined kT-Core among said collection of kT-Core circuits. 7. The circuit of claim 3 wherein at least one kT-Core circuit among said collection of kT-Core circuits couples readout electrodes together to form a larger combined kT-Core among said collection of kT-Core circuits.