According to one embodiment, a process conversion difference in a processed pattern having undergone a process via the resist pattern can be predicted, based on results of simulation of a cross-sectional shape of the resist pattern by which predicted values of resist dimensions adapted to a relationship between a parameter for lithography and actual measurement values of the resist dimensions.
Please help me write a proper abstract based on the patent claims. CLAIM: 1. A process conversion difference prediction device, wherein the device configured to predict a process conversion difference in a processed pattern having undergone a process via a resist pattern, based on results of simulation of a cross-sectional shape of the resist pattern by which predicted values of resist dimensions adapted to a relationship between a parameter for lithography and actual measurement values of the resist dimensions are obtained. 2. The process conversion difference prediction device according to claim 1, comprising: a resist dimension calculation unit that calculates by simulation a relationship between the parameter for lithography and the predicted values of the resist dimensions; a resist depth determination unit that determines the predicted values of the resist dimensions at a depth along resist film thickness adapted to the relationship between the parameter and the actual measurement values of the resist dimensions, based on results of the simulation of the cross-sectional shape of the resist pattern; and a resist shape calculation unit that calculates the cross-sectional shape of the resist pattern based on the results of the simulation of the cross-sectional shape of the resist pattern, wherein the device predicts the process conversion difference in the processed pattern having undergone the process via the resist pattern, based on the predicted values of the resist dimensions and the cross-sectional shape of the resist pattern. 3. The process conversion difference prediction device according to claim 1, wherein the parameter is selected from at least one of exposure amount, focus, mask size, mask pattern position, resolution auxiliary pattern size, and resolution auxiliary pattern position. 4. The process conversion difference prediction device according to claim 1, wherein the cross-sectional shape of the resist pattern indicates a taper angle of the resist pattern. 5. The process conversion difference prediction device according to claim 1, wherein the process conversion difference is a difference between the predicted values of the resist dimensions and the actual measurement values of the dimensions of the processed pattern. 6. The process conversion difference prediction device according to claim 1, wherein the predicted values of the resist dimensions with changes in the parameter are calculated by simulation at each depth of the resist pattern, the predicted values of the resist dimensions closest to the tendency of changes in actual measurement values of the resist dimensions with changes in the parameter are determined, and the cross-sectional shape of the resist pattern by which the predicted values of the resist dimensions are obtained is calculated by simulation. 7. The process conversion difference prediction device according to claim 6, wherein the process conversion difference in the processed pattern is predicted with reference to the actual measurement values of the dimensions of the processed pattern based on the predicted values of the resist dimensions closest to the tendency of changes in the actual measurement values of the resist dimensions with changes in the parameter and the cross-sectional shape of the resist pattern. 8. A process conversion difference prediction method, comprising: simulating a cross-sectional shape of a resist pattern by which predicted values of resist dimensions adapted to a relationship between a parameter for lithography and actual measurement values of the resist dimensions are obtained; and predicting a process conversion difference in a processed pattern having undergone a process via the resist pattern, based on results of the simulation of the cross-sectional shape of the resist pattern. 9. The process conversion difference prediction method according to claim 8, further comprising determining the predicted values of the resist dimensions at a depth along resist film thickness adapted to the relationship between the parameter and the actual measurement values of the resist dimensions, based on results of the simulation of the cross-sectional shape of the resist pattern. 10. The process conversion difference prediction method according to claim 8, wherein the parameter is selected from at least one of exposure amount, focus, mask size, mask pattern position, resolution auxiliary pattern size, and resolution auxiliary pattern position. 11. The process conversion difference prediction method according to claim 8, wherein the cross-sectional shape of the resist pattern indicates a taper angle of the resist pattern. 12. The process conversion difference prediction method according to claim 8, wherein the process conversion difference is a difference between the predicted values of the resist dimensions and the actual measurement values of the dimensions of the processed pattern. 13. The process conversion difference prediction method according to claim 8, wherein the predicted values of the resist dimensions with changes in the parameter are calculated by simulation at each depth of the resist pattern, the predicted values of the resist dimensions closest to the tendency of changes in actual measurement values of the resist dimensions with changes in the parameter are determined, and the cross-sectional shape of the resist pattern by which the predicted values of the resist dimensions are obtained is calculated by simulation. 14. The process conversion difference prediction method according to claim 13, wherein the process conversion difference in the processed pattern is predicted with reference to the actual measurement values of the dimensions of the processed pattern based on the predicted values of the resist dimensions closest to the tendency of changes in the actual measurement values of the resist dimensions with changes in the parameter and the cross-sectional shape of the resist pattern. 15. A non-transitory computer-readable recording medium containing a process conversion difference prediction program which cause a computer to perform a process conversion difference prediction method, the method comprising: simulating a cross-sectional shape of a resist pattern by which predicted values of resist dimensions adapted to a relationship between a parameter for lithography and actual measurement values of the resist dimensions are obtained; and predicting a process conversion difference in a processed pattern having undergone a process via the resist pattern, based on results of the simulation of the cross-sectional shape of the resist pattern. 16. The non-transitory computer-readable recording medium according to claim 15, wherein the parameter is selected from at least one of exposure amount, focus, mask size, mask pattern position, resolution auxiliary pattern size, and resolution auxiliary pattern position. 17. The non-transitory computer-readable recording medium according to claim 15, wherein the cross-sectional shape of the resist pattern indicates a taper angle of the resist pattern. 18. The non-transitory computer-readable recording medium according to claim 15, wherein the process conversion difference is a difference between the predicted values of the resist dimensions and the actual measurement values of the dimensions of the processed pattern. 19. The non-transitory computer-readable recording medium according to claim 15, wherein the predicted values of the resist dimensions with changes in the parameter are calculated by simulation at each depth of the resist pattern, the predicted values of the resist dimensions closest to the tendency of changes in actual measurement values of the resist dimensions with changes in the parameter are determined, and the cross-sectional shape of the resist pattern by which the predicted values of the resist dimensions are obtained is calculated by simulation. 20. The non-transitory computer-readable recording medium according to claim 19, wherein the process conversion difference in the processed pattern is predicted with reference to the actual measurement values of the dimensions of the processed pattern based on the predicted values of the resist dimensions closest to the tendency of changes in the actual measurement values of the resist dimensions with changes in the parameter and the cross-sectional shape of the resist pattern.