I want to know the answer to the following question:
At what rate is the drain-source current increased when the gate-source current is increased?
All the background I'm provided with is that "As the gate–source voltage (VGS) is increased, the drain–source current (IDS) increases exponentially for VGS below threshold, and then at a roughly quadratic rate (IGS ∝ (VGS − VT)2) (where VT is the threshold voltage at which drain current begins) in the "space-charge-limited" region above threshold.". Is that enough to answer the question?