us 10 620 533 B2  117  118  TABLE I-continued  Acid  Polymer  generator  (pbw)  (pbw)  1-10  Polymer 1 PAGl  (100)  (8.0)  1-11  Polymer 1 PAG2  (100)  (8.0)  1-12  Polymer 2  (100)  1-13  Polymer 3 PAGl  (100)  (8.0)  Comparative  1-1  Polymer 1 PAGl  Example  (100)  (8.0)  1-2  Polymer 1 PAGl  (100)  (8.0)  1-3  Polymer 1 PAGl  (100)  (8.0)  1-4  Polymer 1 PAGl  (100)  (8.0)  Water-repellent  Quencher  polymer  (pbw)  (pbw)  Quencher 10  Water-repellent  (4.50)  polymer 1  (4.0)  Quencher 11  Water-repellent  (4.50)  polymer 1  (4.0)  Quencher 11  Water-repellent  (4.50)  polymer 1  (4.0)  Quencher 11  Water-repellent  (4.50)  polymer 1  (4.0)  Comparative  Water-repellent  Amine 1  polymer 1  (3.13)  (4.0)  Comparative  Water-repellent  Amine 2  polymer 1  (3.13)  (4.0)  Comparative  Water-repellent  Quencher 1  polymer 1  (4.50)  (4.0)  Comparative  Water-repellent  Quencher 2  polymer 1  (4.50)  (4.0)  Organic  PEB  PPD  solvent  temp. Sensitivity  size  (pbw)  (" C.)  (mJ/cm 2 )  (nm)  PGMEA(2 200)  95  36  0.1  GBL(300)  PGMEA(2 200)  95  39  0.4  GBL(300)  PGMEA(2 200)  100  36  0  GBL(300)  PGMEA(2 200)  95  39  0.2  GBL(300)  PGMEA(2 200)  95  55  1.3  GBL(300)  PGMEA(2 200)  95  56  1.5  GBL(300)  PGMEA(2 200)  95  45  0.8  GBL(300)  PGMEA(2 200)  95  44  0.6  GBL(300)  EB Writing Test  Examples 2-1 to 2-5 and Comparative Examples  2-1 to 2-2  Each of the resist compositions in Table 2 was spin coated  onto a silicon substrate  which had been vapor primed with  hexamethyldisilazane (HMDS)  and pre-baked on a hot plate  at 110°  C. for 60 seconds to form a resist film of 80 nm thick.  Using a system HL-S00D (Hitachi Ltd.) at an accelerating  In the case of positive resist film  the resolution is a  minimum trench size at the exposure dose that provides a  resolution as designed of a 120-nm trench pattern. In the  case of negative resist film  the resolution is a minimum  isolated line size at the exposure dose that provides a  resolution as designed of a 120-nm isolated line pattern.  It  is  noted that Examples 2-1  to  2-4 and Comparative  Examples 2-1 to 2-2 are positive resist compositions  and  Example 2-5 is a negative resist composition.  The results are shown in Table 2.  TABLE 2  It  is demonstrated in Tables 1 and 2 that resist composi› tions comprising a sulfonium or iodonium salt of sulfonic  acid containing a morpholino group offer dimensional sta- bility on PPD and a satisfactory resolution.  Japanese Patent Application No. 2015-205402 is incor› porated herein by reference.  Acid  Organic  Polymer  generator  Quencher  solvent  Sensitivity Resolution  (pbw)  (pbw)  (pbw)  (pbw)  (µC/cm 2 )  (nm)  Example  2-1  Polymer 4  Quencher 8  PGMEA(400)  33  80  (100)  (2.50)  CyH(2 000)  PGME(l00)  2-2  Polymer 4  Quencher 9  PGMEA(400)  35  80  (100)  (2.50)  CyH(2 000)  PGME(l00)  2-3  Polymer 4  Quencher 10 PGMEA(400)  35  80  (100)  (2.50)  CyH(2 000)  PGME(l00)  2-4  Polymer 5 PAG3  Quencher 12 PGMEA(400)  39  85  (100)  (15.0)  (2.50)  CyH(l 600)  CyP(500)  2-5  Polymer 6 PAGl  Quencher 13 PGMEA(2 000)  38  75  (100)  (10.0)  (2.50)  CyH(500)  Comparative  2-1  Polymer 4  Comparative PGMEA(400)  38  90  Example  (100)  Quencher 1  CyH(2 000)  (2.50)  PGME(l00)  2-2  Polymer 4  Comparative PGMEA(400)  38  90  (100)  Quencher 2  CyH(2 000)  (2.50)  PGME(l00)  voltage of 50 kV  the resist film was exposed imagewise to  EB in a vacuum chamber. Immediately after the image  writing  the resist film was baked (PEB) on a hot plate at 90°  C. for 60 seconds and developed in a 2.38 wt  % TMAH  aqueous solution for 30 seconds to form a pattern. The resist  pattern was evaluated as follows. 