US 20200159115Al  c19)  United States  c12)  Patent Application Publication  Ono et al.  c10)  Pub. No.: US 2020/0159115 Al  (43)  Pub. Date:  May 21  2020  (54)  NOVEL SALT COMPOUND  CHEMICALLY  AMPLIFIED RESIST COMPOSITION  AND  PATTERNING PROCESS  (71)  Applicant:  Shin-Etsu Chemical Co.  Ltd.   Tokyo  (JP)  (72)  Inventors:  Emiko Ono   Joetsu-shi (JP);  Masayoshi Sagehashi   Joetsu-shi (JP);  Masahiro Fukushima   Joetsu-shi (JP);  Yuki Kera   Joetsu-shi (JP)  (73)  Assignee:  Shin-Etsu Chemical Co.  Ltd.   Tokyo  (JP)  (21)  Appl. No.:  16/669 780  (22)  Filed:  Oct. 31  2019  (51)  Int. Cl.  (52)  U.S. Cl.  CPC ..........  G03F 710045  (2013.01);  G03F 710397  (2013.01);  G03F 710382  (2013.01);  C07D  307177  (2013.01);  C07C 381112  (2013.01);  G03F 7/162  (2013.01);  C07D 311/00  (2013.01);  C07D 333176  (2013.01);  C07D  333/08  (2013.01);  C07D 327106  (2013.01);  C08F 220118  (2013.01);  C07C 309112  (2013.01)  G03F 71038  C07D  307177  C07C 381112  C07C 309112  C07D 311/00  C07D 333176  C07D 333/08  C07D 327106  C08F 220118  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  (2006.01)  G03F  71004  G03F  71039  (2006.01)  (2006.01)  A novel salt having an amide bond in its anion structure is  provided. A chemically amplified resist composition com› prising the salt has advantages including minimal defects  and improved values of sensitivity  LWR  MEF and CDU   when processed by lithography using high-energy radiation  such as KrF excimer laser  ArF excimer laser  EB or EUV.  Nov. 15  2018  (JP) ................................. 2018-214718  (30)  Foreign Application Priority Data  (57)  ABSTRACT  Publication Classification 