A PCD (Photoconductance decay)-calibrated photoluminescence image showing the change in passivation quality (minority carrier lifetimes) after dark annealing a 4-inch p-type monocrystalline float zone silicon wafer coated with 10nm layer of intrinsic amorphous silicon at various temperatures for 50 seconds. The images were taken as a differential of two images registered using LumiTools ICARUS.
Own work
Radiotrefoil