Photoresists are light-sensitive materials, composed of a polymer, a sensitizer, and a solvent. Each element has a particular function. The polymer changes its structure when it is exposed to radiation. The solvent allows the photoresist to be spun and to form thin layers over the wafer surface. Finally, the sensitizer, or inhibitor, controls the photochemical reaction in the polymer phase.
Photoresists can be classified as positive or negative. In positive photoresists, the photochemical reaction that occurs during exposure, weakens the polymer, making it more soluble to the developer so the positive pattern is achieved. Therefore, the masks contains an exact copy of the pattern, which is to remain on the wafer, as a stencil for subsequent processing. In the case of negative photoresists, exposure to light causes the polymerization of the photoresist so the negative resist remains on the surface of the substrate where it is exposed, and the developer solution removes only the unexposed areas. Masks used for negative photoresists contain the inverse or photographic “negative” of the pattern to be transferred. Both negative and positive photoresists have their own advantages. The advantages of negative photoresists are good adhesion to silicon, lower cost, and a shorter processing time. The advantages of positive photoresists are better resolution and thermal stability.