In 2012, scientists at the University of New South Wales were able to use phosphine to precisely, deterministically eject a single silicon atom onto a surface of epitaxial silicon. This resulting adatom created what is described as a single-atom transistor.  Thus, inasmuch as chemical empirical formulas pinpoint the locations of branching ions that are attached to a particular molecule, the dopant of silicon based transistors and other such electronic components will have the location identified of each dopant atom or molecule, along with the associated characteristic of the device based on the named locations.  Thus, the mapping of the dopant substances will give exact characteristics of any given semiconductor device, once all is known.
With the technology available nowadays it is possible to create a linear chain of adatoms on top of an epitaxial film. With this, one can analyse theoretical situations.
Furthermore, Usami et al. were able to create quantum wells by adding Si atoms to a SiGe bulk crystal. Within these wells they observed photoluminescence of excitons that were confined in these wells.