The gallium antimonide (GaSb) PV cell, invented in 1989, is the basis of most PV cells in modern TPV systems. GaSb is a III-V semiconductor with the zinc blende crystal structure. The GaSb cell is a key development owing to its narrow bandgap of 0.72 eV. This allows GaSb to respond to light at longer wavelengths than silicon solar cell, enabling higher power densities in conjunction with manmade emission sources. A solar cell with 35% efficiency was demonstrated using a bilayer PV with GaAs and GaSb, setting the solar cell efficiency record.
Manufacturing a GaSb PV cell is quite simple. Czochralski tellurium-doped n-type GaSb wafers are commercially available. Vapor-based zinc diffusion is carried out at elevated temperatures (~450 °C) to allow for p-type doping. Front and back electrical contacts are patterned using traditional photolithography techniques and an anti-reflective coating is deposited. Efficiencies are estimated at ~20% using a 1000 °C black body spectrum. The radiative limit for efficiency of the GaSb cell in this setup is 52%.