GaN crystals can be grown from a molten Na/Ga melt held under 100 atmospheres of pressure of N at 750 °C. As Ga will not react with N below 1000 °C, the powder must be made from something more reactive, usually in one of the following ways:
: 2 Ga + 2 NH → 2 GaN + 3 H
: GaO + 2 NH → 2 GaN + 3 HO
Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at  at normal atmospheric pressure.