GaAs has been used to produce near-infrared laser diodes since 1962. It is often used in alloys with other semiconductor compounds for these applications.
N-type GaAs doped with silicon donor atoms (on Ga sites) and boron acceptor atoms (on As sites) responds to ionizing radiation by emitting scintillation photons. At cryogenic temperatures it is among the brightest scintillators known and is a promising candidate for detecting rare electronic excitations from interacting dark matter, due to the following six essential factors:
# Silicon donor electrons in GaAs have a binding energy that is among the lowest of all known n-type semiconductors. Free electrons above  per cm are not “frozen out" and remain delocalized at cryogenic temperatures.
# Boron and gallium are group III elements, so boron as an impurity primarily occupies the gallium site. However, a sufficient number occupy the arsenic site and act as acceptors that efficiently trap ionization event holes from the valence band.
# After trapping an ionization event hole from the valence band, the boron acceptors can combine radiatively with delocalized donor electrons to produce photons 0.2 eV below the cryogenic band-gap energy (1.52 eV). This is an efficient radiative process that produces scintillation photons that are not absorbed by the GaAs crystal.
# There is no afterglow, because metastable radiative centers are quickly annihilated by the delocalized electrons. This is evidenced by the lack of thermally induced luminescence.
# N-type GaAs has a high refractive index (~3.5) and the narrow-beam absorption coefficient is proportional to the free electron density and typically several per cm. One would expect that  almost all of the scintillation photons should be trapped and absorbed in the crystal, but this is not the case. Recent Monte Carlo and Feynman path integral calculations have shown that the high luminosity could be explained if most of the narrow beam absorption is not absolute absorption but a novel type of optical scattering from the conduction electrons with a cross section of about 5 x 10 cm that allows scintillation photons to escape total internal reflection. This cross section is about 10 times larger than Thomson scattering but comparable to the optical cross section of the conduction electrons in a metal mirror.
# N-type GaAs(Si,B) is commercially grown as 10 kg crystal ingots and sliced into thin wafers as substrates for electronic circuits. Boron oxide is used as an encapsulant to prevent the loss of arsenic during crystal growth, but also has the benefit of providing boron acceptors for scintillation.