Silicon shows a peculiar profile, in that its electrical resistance increases with temperature up to about 160 °C, then starts decreasing, and drops further when the melting point is reached. This can lead to thermal runaway phenomena within internal regions of the semiconductor junction; the resistance decreases in the regions which become heated above this threshold, allowing more current to flow through the overheated regions, in turn causing yet more heating in comparison with the surrounding regions, which leads to further temperature increase and resistance decrease. This leads to the phenomenon of current crowding and formation of current filaments (similar to current hogging, but within a single device), and is one of the underlying causes of many semiconductor junction failures.