If one assumes infinite shunt resistance, the characteristic equation can be solved for V:
Thus, an increase in I produces a reduction in V proportional to the inverse of the logarithm of the increase. This explains mathematically the reason for the reduction in V that accompanies increases in temperature described above. The effect of reverse saturation current on the I-V curve of a crystalline silicon solar cell are shown in the figure to the right. Physically, reverse saturation current is a measure of the "leakage" of carriers across the p-n junction in reverse bias. This leakage is a result of carrier recombination in the neutral regions on either side of the junction.