Extending their work on MOS technology, Atalla and Kahng next did pioneering work on hot carrier devices, which used what would later be called a Schottky barrier. The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 19601961. They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. It was one of the first metal-base transistors. The Schottky diode went on to assume a prominent role in mixer applications.