For Schottky diodes, majority carrier traps are observed by the application of a reverse bias pulse, while minority carrier traps can be observed when the reverse bias voltage pulses are replaced with light pulses with the photon energy from the above semiconductor bandgap spectral range. This method is called Minority Carrier Transient Spectroscopy (MCTS). The minority carrier traps can be also observed for the p-n junctions by application of forward bias pulses, which inject minority carriers into the space charge region. In DLTS plots the minority carrier spectra usually are depicted with an opposite sign of amplitude in respect to the majority carrier trap spectra.