Historically, aluminium has been used as conductor in integrated circuits, due to its good adherence to substrate, good conductivity, and ability to form ohmic contacts with silicon. However, pure aluminium is susceptible to electromigration. Research shows that adding 2-4% of copper to aluminium increases resistance to electromigration about 50 times. The effect is attributed to the grain boundary segregation of copper, which greatly inhibits the diffusion of aluminium atoms across grain boundaries.
Pure copper wires can withstand approximately five times more current density than aluminum wires while maintaining similar reliability requirements. This is mainly due to the higher electromigration activation energy levels of copper, caused by its superior electrical and thermal conductivity as well as its higher melting point. Further improvements can be achieved by alloying copper with about 1% palladium which inhibits diffusion of copper atoms along grain boundaries in the same way as the addition of copper to aluminium interconnect.