Power MOSFETs typically increase their on-resistance with temperature. Under some circumstances, power dissipated in this resistance causes more heating of the junction, which further increases the junction temperature, in a positive feedback loop. As a consequence, power MOSFETs have stable and unstable regions of operation. However, the increase of on-resistance with temperature helps balance current across multiple MOSFETs connected in parallel, so current hogging does not occur. If a MOSFET transistor produces more heat than the heatsink can dissipate, then thermal runaway can still destroy the transistors. This problem can be alleviated to a degree by lowering the thermal resistance between the transistor die and the heatsink. See also Thermal Design Power.