In addition, channeling of ions can also be used to analyze a crystalline sample for lattice damage. If atoms within the target are displaced from their crystalline lattice site, this will result in a higher backscattering yield in relation to a perfect crystal. By comparing the spectrum from a sample being analyzed to that from a perfect crystal, and that obtained at a random (non-channeling) orientation (representative of a spectrum from an amorphous sample), it is possible to determine the extent of crystalline damage in terms of a fraction of displaced atoms. Multiplying this fraction by the density of the material when amorphous then also gives an estimate for the concentration of displaced atoms. The energy at which the increased backscattering occurs can also be used to determine the depth at which the displaced atoms are and a defect depth profile can be built up as a result.