Early TPV work focused on the use of silicon. Silicon's commercial availability, low cost, scalability and ease of manufacture makes this material an appealing candidate. However, the relatively wide bandgap of Si (1.1eV) is not ideal for use with a black body emitter at lower operating temperatures. Calculations indicate that Si PVs are only feasible at temperatures much higher than 2000 K. No emitter has been demonstrated that can operate at these temperatures. These engineering difficulties led to the pursuit of lower-bandgap semiconductor PVs.
Using selective radiators with Si PVs is still a possibility. Selective radiators would eliminate high and low energy photons, reducing heat generated. Ideally, selective radiators would emit no radiation beyond the band edge of the PV converter, increasing conversion efficiency significantly. No efficient TPVs have been realized using Si PVs.