Ge-V is predicted to consist of one germanium atom situated between two adjacent lattice vacancies and have the same D point group symmetry as SiV. It has a single ZPL at 602 nm (2.059 eV) at room-temperature, which splits into two components separated by 0.67 meV at low-temperatures (10 K). The Ge-V has an excited state lifetime of 1.4–5.5 ns.