If a dopant is added to the material (example: Nd in BaTiO) the impurity will tend to stick to the grain boundaries. As the grain boundary tries to move (as atoms jump from the convex to concave surface) the change in concentration of the dopant at the grain boundary will impose a drag on the boundary. The original concentration of solute around the grain boundary will be asymmetrical in most cases. As the grain boundary tries to move, the concentration on the side opposite of motion will have a higher concentration and therefore have a higher chemical potential. This increased chemical potential will act as a backforce to the original chemical potential gradient that is the reason for grain boundary movement. This decrease in net chemical potential will decrease the grain boundary velocity and therefore grain growth.