Intermediate band photovoltaics in solar cell research provides methods for exceeding the Shockley–Queisser limit on the efficiency of a cell. It introduces an intermediate band (IB) energy level in between the valence and conduction bands. Theoretically, introducing an IB allows two photons with energy less than the bandgap to excite an electron from the valence band to the conduction band. This increases the induced photocurrent and thereby efficiency.
Luque and Marti first derived a theoretical limit for an IB device with one midgap energy level using detailed balance. They assumed no carriers were collected at the IB and that the device was under full concentration. They found the maximum efficiency to be 63.2%, for a bandgap of 1.95eV with the IB 0.71eV from either the valence or conduction band.
Under one sun illumination the limiting efficiency is 47%. Several means are under study to realize IB semiconductors with such optimum 3-bandgap configuration, namely via materials engineering (controlled inclusion of deep level impurities or highly-mismatched alloys) and nano-structuring (quantum-dots in host hetero-crystals).