#Rutile (TiO) frequently exhibits a prismatic or acicular growth habit. In the presence of alkali dopants or a solid-state ZrSiO dopant, rutile has been observed to crystallise from an anatase parent-phase in the form of abnormally large grains existing in a matrix of finer, equiaxed anatase or rutile grains.
# Alumina, AlO with silica and/or yttria dopants/impurities has been reported to exhibit undesirable AGG.
#BaTiO barium titanate with an excess of TiO is known to exhibit abnormal grain growth with profound consequences on piezoelectric performance.
#Tungsten carbide has been reported to exhibit AGG of faceted grains in the presence of a liquid cobalt-containing phase at grain boundaries
#Silicon nitride (SiN) may exhibit AGG depending on the size distribution of β-phase material in an α-SiN precursor. This type of grain growth is of importance in the toughening of silicon nitride materials
#Silicon carbide has been shown to exhibit improved fracture toughness as the result of AGG processes yielding elongated crack-tip/wake-bridging grains, with consequences for applications in ballistic armor. This enhancement of fracture toughness in ceramic materials via crack-bridging resulting from AGG is consistent with reported morphological effects on crack propagation in ceramics
#Strontium barium niobate, used for electro-optics and dielectric applications, is known to exhibit AGG with significant consequences on the electronic performance of the material
#Calcium titanate (CaTiO, perovskite) systems doped with BaO have been observed to exhibit AGG without the formation of liquid as the result of polytype interfaces between solid phases