Epitaxial wafers of crystalline silicon can be grown on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 µm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots. Solar cells made with this "kerfless" technique can have efficiencies approaching those of wafer-cut cells, but at appreciably lower cost if the CVD can be done at atmospheric pressure in a high-throughput inline process. The surface of epitaxial wafers may be textured to enhance light absorption.
In June 2015, it was reported that heterojunction solar cells grown epitaxially on n-type monocrystalline silicon wafers had reached an efficiency of 22.5% over a total cell area of 243.4 cm.