The germanium-vacancy center (Ge-V) is an optically active defect in diamond, which can be created by doping germanium into diamond during its growth or by implanting germanium ions into diamond after its growth. Its properties are similar to those of the silicon-vacancy center in diamond (SiV). Ge-V can behave as a single-photon source and shows potential for quantum and nanoscience applications due to its narrow zero-phonon line (ZPL) and minimal phononic-sideband (compared to that of the nitrogen-vacancy center (NV)).