Constructing a THz-TDS experiment using low temperature grown GaAs (LT-GaAs) based antennas requires a laser whose photon energy exceeds the band gap of the material. Ti:sapphire lasers tuned to around 800 nm, matching the energy gap in LT-GaAs, are ideal as they can generate optical pulses as short as 10 fs. These lasers are available as commercial, turnkey systems.