There is an important shortcoming for DLTS: it cannot be used for insulating materials. (Note: an insulator can be considered as a very large bandgap semiconductor.) For insulating materials it is difficult or impossible to produce a device having a space region for which width could be changed by the external voltage bias and thus the capacitance measurement-based DLTS methods cannot be applied for the defect analysis. Basing on experiences of the thermally stimulated current (TSC) spectroscopy, the current transients are analyzed with the DLTS methods (I-DLTS), where the light pulses are used for the defect occupancy disturbance. This method in the literature is sometimes called the Photoinduced Transient Spectroscopy (PITS). I-DLTS or PITS are also used for studying defects in the i-region of a p-i-n diode.